V.B. Baiburin – Honored Scientist of RF, Dr.Sc.(Phys.-Math.), Professor, Head of Department «Information security of automated systems», Yuri Gagarin State Technical University of Saratov

E-mail: baiburinvb@rambler.ru

V.A. Kuznetsov – Dr.Sc.(Phys.-Math.), Professor, Department «Information security of automated systems», Yuri

Gagarin State Technical University of Saratov

E-mail: kuznetsov.va1948@yandex.ru

S.L. Chernyshev – Dr.Sc.(Eng.), Professor, Department «Radio Electronic Systems and Devices», Bauman Moscow

State Technical University

E-mail: chernshv@bmstu.ru

S.L. Shmakov – Ph.D.(Chem.), Associate Professor, Department of Polymers, Saratov State University named after

N.G. Chernyshevsky

E-mail: ShmakovSL@info.sgu.ru

A varyzone structure model is considered, where recombination channels are switched due to the carriers being dragged by the internal electric field into the region with a lower recombination rate. Such an effect leads to an improvement in a number of technically useful semiconductor properties. Basing on our calculations performed, it was concluded how the dragging of carriers influences on the carrier concentration profile in thin and thick samples.

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