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Journal Science Intensive Technologies №11 for 2013 г.
Article in number:
Development Perspectives of Power Electronic Devices on Gallium Nitride
Keywords: wide bandgap semiconductors GaN heterostructures GaN-on-Si
Authors:
V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru
Abstract:
This article reviews advantages of wide bandgap semiconductor devices, the state-of-art production of wide bandgap semiconductor electronics in Russia and worldwide, relevance and perspectives of new power electronic components development on the base of wide bandgap semiconductors, as well as some aspect of R&D and manufacturing fundamentals formation for development and production of competitive solid state GaN and GaN-on-Si power electronics on the site of State Plant Pulsar.
Pages: 5-12
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