A.A. Arendarenko - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: arendarenko.pulsar@mail.ru V.N. Danilin - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: danilin.pulsar@mail.ru А.А. Makarov - Leading Expert, JSC «GZ «Pulsar» (Moscow). E-mail: a.makarov@gz-pulsar.ru R.I. Tichkin - Head of Department, JSC «GZ «Pulsar» (Moscow). E-mail: kb-it@mail.ru

Specific details of epitaxial growth of GaN-based nanoheterostructures for microwave transistors are considered, simulation of epitaxial growth for InxAl1-xN and GaN layers was carried out for Close-Coupled Showerhead reactor. Epitaxial structures with low sheet resistivity in range 203-224 Ohm/square are obtained.

 

1. Kishhinskijj A.A. SHirokopolosnye tranzistornye usiliteli SVCH-diapazona: smena pokolenijj // EHlektronika: NTB. 2010. №. 2.
2. Medjdoub F.et al. Status of the emerging InAlN/GaN power HEMT technology // Open Electrical & Electronic Engineering Journal. 2008. T. 2. S. 1-7.
3. Cheng, Kai, et al. Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si (111) by MOVPE / Physica status solidi (c) 7.78 (2010): 1967-1969.
4. Sun, Haifeng,et al. 100-nm-Gate (Al, In) N/GaN HEMTs Grown on SiC With / Electron Device Letters, IEEE 31.4 (2010): 
5. P. 293-295.
6. Lee D.S. et al. InAlN/GaN HEMTs with AlGaN back barriers // Electron Device Letters. IEEE. 2011. T. 32. №. 5. S. 617-619.
7. Lobanova A.V.et al. Effect of V/III ratio in AlN and AlGaN MOVPE // Journal of crystal growth. 2006. T. 287. №. 2. S. 601-604.
8. Virtual Reactor - Software for Modeling of Long-Term Growth of Bulk Crystals. http://www.str-soft.com/products/Virtual_Reactor/index.htm
9. Field Effect Transistor Integrated Simulator. http://www.str-soft.com/products/FETIS/
10. Burobin V.A. Osobennosti razrabotki processa vyrashhivanija struktur InAlN/GaN metodom gazofaznojj ehpitaksii iz metallorganicheskikh soedinenijj, primenjaemykh v SVCH tranzistorakh s vysokojj udelnojj vykhodnojj moshhnostju // Uspekhi sovremennojj radioehlektroniki. 2014. № 9. S. 48-51.