350 rub
Journal №1 for 2012 г.
Article in number:
Crystallization behaviour of ferroelectric in nanosized multilayer heterostructures
Authors:
D.S. Seregin, K.A. Vorotilov, O.M. Zhigalina, Yu.V. Podgorny, A.S. Sigov
Abstract:
Microstructural and electrical properties of thin ferroelectric sol-gel PZT (PbZr0,48Ti0,52O3) films prepared on Pt/TiO2/SiO2/Si substrates by spin - on techniques with crystallization temperature from 550-900 °C are studied. The features of PZT grain structure formation, diffusion processes, polarization properties and capacitance - voltage dependences of multilayer nanosized heterostructures prepared at different annealing temperatures of PZT are discussed.
Pages: 3-14
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