V.D. Shashurin1, N.A. Vetrova2, E.V. Kuimov3, K.P. Pchelintsev4, A.S. Aleksandrov5

1,3–5 Bauman Moscow State Technical University (Moscow, Russia)
2  Peoples' Friendship University of Russia (Moscow, Russia)

At the initial stages of the development of semiconductor heterostructure devices with transverse transport, the calculation of the transmission coefficient plays a special role. Due to the specific nature of the dependence of the transmission coefficient on the energy of charge carriers, the choice of a numerical method for its calculation is a difficult task. An incorrect choice of the method for calculating the tunneling transparency coefficient leads to unreasonably high time costs and, worse, to the numerical instability of the solution.

Purpose – developing a topologically oriented approach to the choice of a method for modeling the transparency of heterostructural channels of nanoelectronic devices

The results of calculations of the tunneling transparency coefficient of heterostructures by the methods of transfer matrices and Green's functions are analyzed, and the dependence of the computational characteristics of the corresponding algorithms on the number of heterojunctions is estimated. Topologically-oriented spheres of application of algorithms for calculating the coefficient of tunnel transparency are established.

Recommendations for the construction of automated computational algorithms with reduced time complexity for efficient search for the coefficient of tunneling transparency of nanoelectronic heterostructure devices with transverse transport based on semiconductor superlattices.

Shashurin V.D., Vetrova N.A., Kuimov E.V., Pchelintsev K.P., Aleksandrov A.S. Topologically oriented approach to the choice of a method for modeling the transparency of heterostructural channels in nanoelectronic devices. Nanotechnology: development and applications – XXI century. 2022 V. 14. № 1. P. 31–39. DOI: https://doi.org/10.18127/j22250980-202201-04 (in Russian)

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