Journals
Books
Articles by keyword Nanoelectronics
Field-Effect Transistor on the Basis of Silicon Nanowire
V.A. Krupenin, D.E. Presnov, V.S. Vlasenko, S.V. Amitonov
Turing Machine as the Associative Neurocomputer
G.M. Alakoz, R.V. Svetlov
Silicon Nanoelectronics: Problems and Prospects
Valiev K. A., Vyurkov V. V., Orlikovsky A. A.
Nanoelectronics Devices
Shchuka A. A.
Micro- and Nanoelectronics Relating to Radar and Radio Communication Systems
R.P. Bystrov, Ju.V. Guluaev, S.A. Nikitov, А.V. Sokolov
Physical Electronics, Nanomaterials, Nanotechnologies (Insight into Problem)
Alexandrov A.F.
Nanotechnology for Nanoelectronics: Nanogap Fabrication in Metal Nanowire by Focused Ion Beam
I.V. Sapkov, V.V. Kolesov, E.S. Soldatov
Nanotechnology for Nanoelectronics: Nanogap Fabrication in Metal Nanowire by Focused Ion Beam
I.V. Sapkov, V.V. Kolesov, E.S. Soldatov
Integrated expert system for diagnosis of billet quality for electron-beam lithography
G.V. Rybina, Yu.M. Blokhin, G.S. Gokhberg, A.S. Rudyi
Photomasks design features for nanosized semiconductor VLSI
A.V. Kornyukhin, S.A. Kurdyukov, A.N. Lantsev, P.A. Luchnikov, M.V. Starilov
Advanced technologies of telecommunications equipment components manufacturing
V.E. Drach - Ph. D. (Eng.), Associate Professor, EIU1-KF, Kaluga branch of the Bauman MSTU. E-mail: drach@kaluga.org
A.V. Rodionov - Ph. D. (Eng.), Associate Professor, EIU2-KF, Kaluga branch of the Bauman MSTU. E-mail: andviro@gmail.com
Modeling of the transparency of low-dimensional channel with quantum confinement in semiconductor devices based on 2D-structures with transverse current transfer

N.A.Vetrova¹, A.A. Filyaev², V.D. Shashurin³

1, 2, 3 Bauman Moscow State Technical University (Moscow, Russia), 

     1 vetrova@bmstu.ru; 2 alex.filyaev.98@gmail.com; 3 schashurin@bmstu.ru

A Perseptron network for prediction of the electrical characteristics of a resonant-tunnel diode

N.A. Vetrova1, K.P. Pchelintsev2, V.D. Shashurin3

1–3 Bauman Moscow State Technical University (Moscow, Russia)

Topologically oriented approach to the choice of a method for modeling the transparency of heterostructural channels in nanoelectronic devices

V.D. Shashurin1, N.A. Vetrova2, E.V. Kuimov3, K.P. Pchelintsev4, A.S. Aleksandrov5

1,3–5 Bauman Moscow State Technical University (Moscow, Russia)
2  Peoples' Friendship University of Russia (Moscow, Russia)

Compact current transport model taking into account dissipative and resonant tunneling processes in a heterostructured diode channel for ECAD of a nanoelectronic component base

E.V. Kuimov1, N.A. Vetrova2

1 Bauman Moscow State Technical University (Moscow, Russia),
1 vetrova@bmstu.ru, 2 kuimov@bmstu.ru, mailto:alex.filyaev.98@gmail.com

Application of femtolasers in the production of telecommunication devices (Part 1)

A.A. Kondrashin1, A.N. Lyamin2, V.I. Kuzkin3

1–3 Moscow Aviation Institute (National Research University) (Moscow, Russia)
1 pionermai@gmail.com, 2 dronozavr@inbox.ru, 3 kuzkinn@rambler.ru

Application of femtolasers in the production of telecommunication devices (part 2)

A.A. Kondrashin1, A.N. Lyamin2, V.I. Kuzkin3

1–3 Moscow Aviation Institute (National Research University) (Moscow, Russia)
1 pionermai@gmail.com, 2 dronozavr@inbox.ru, 3 kuzkinn@rambler.ru

Nanotechnology and quantum dots: prospects in optoelectronics and sensing devices

A.O. Sinelnikov1, P.S. Kuznetsov2, A.A. Kuznetsova3

1,3 Patrice Lumumba Peoples' Friendship University of Russia (Moscow, Russia)
2 JSC GosNIIP (Moscow, Russia)
1 sinelnikov-ao@pfur.ru, 2 ps_kuznetsov@mail.ru, 3 aniakuzneczova@yandex.ru

Lasers on quantum dots: efficiency and reliability in space applications

A.O. Sinelnikov1, P.S. Kuznetsov2, A.A. Kuznetsova3

1,3 Patrice Lumumba Peoples' Friendship University of Russia (Moscow, Russia)
2 JSC «GOSNIIP» (Moscow, Russia)
1 sinelnikov-ao@pfur.ru, 2 ps_kuznetsov@mail.ru, 3 aniakuzneczova@yandex.ru