350 rub
Journal №2 for 2012 г.
Article in number:
Photomasks design features for nanosized semiconductor VLSI
Keywords: nanoelectronics the technology design VLSI masks optical correction lithography
Authors:
A.V. Kornyukhin, S.A. Kurdyukov, A.N. Lantsev, P.A. Luchnikov, M.V. Starilov
Abstract:
The paper discusses issues of design technology for the production of photomasks of VLSI nanoscale structures with the use of CAD tools. A designing photomasks route and its place in the general route of VLSI production is described; methods to improve the photomask resolution and photomask design CAD tools are presented. The requirements to CAD systems and their relation to equipment process are formed. Based on these requirements evaluation criteria of quality and productivity of the process of photomasks designing are defined.
Pages: 26-35
References
  1. Levinson H. J. Principles of lithography // SPIE. 2005.
  2. Nishi Y., Doering R. Handbook of Semiconductor manufacturing technology. Marcel Decker Inc. 2000.
  3. Kaeslin H. Digital Integrated Circuits: From VLSI Architectures to CMOS Fabrication. Cambridge University Press, 2008.
  4. International Technology Roadmap for Semiconductors (ITRS) reports. 2000-2007.
  5. Cui Z. Nanofabrication: Principles, Capabilities and Limits. Springer Science. 2008. Р. 218-225.
  6. Jaeger R.C. Lithography. Introduction to Microelectronic Fabrication. Upper Saddle River: Prentice Hall. 2002.
  7. Liebmann L.W. Layout Impact of Resolution Enhancement Techniques, SemiconductorResearch and Development Center // IBM Corporation. 2003. Р. 110-117.