N.A.Vetrova¹, A.A. Filyaev², V.D. Shashurin³

1, 2, 3 Bauman Moscow State Technical University (Moscow, Russia), 

     1 vetrova@bmstu.ru; 2 alex.filyaev.98@gmail.com; 3 schashurin@bmstu.ru

The rapid development of micro- and nanoelectronics has led to the possibility of designing modern semiconductor devices based on a superlattices, which operate as nanoscale channels. Now such heterostructures are often used to create nanoelectronic devices operating at terahertz frequencies or optoelectronic devices. One of the most important parameters that determines the electrical properties of semiconductor devices based on heterostructures is the transparency of the heterostructure. Modeling the current-voltage characteristics (CVC) of nanoelectronic devices is characterized by a long computation time, which causes problems in modeling the CVC kinetics due to multiple self-consistent calculations. So, optimization of the calculation is carried out by using a high-speed computational algorithm at the stage of calculating the transparency of the low-dimensional arbitrary complexity channel. In addition, it is important to use a numerically stable computational model to ensure a satisfactory accuracy in calculating CVC of nanoelectronic device. Superlattices, operating as a nanoscale channel of semiconductor devices, have a difficult potential relief, which can’t only increase the calculated time of the computational algorithm, but also violate its computational stability. So, the actual task is to develop a methodology for predicting the transparency of the channel of semiconductor devices on low-dimensional 2D structures with quantum confinement and transverse current transfer based on not only a high-speed, but also a numerically stable quantum-mechanical model for calculating the transparency of the superlattices.

Based on the results of this work, a methodology has been developed for predicting the transparency of a nanoscale arbitrary complexity channel of semiconductor devices on low-dimensional 2D structures with quantum confinement and transverse current transfer, which makes it possible to calculate the transmission coefficient of both double-barrier structures (for example, a low-dimensional channel in resonant tunneling diodes) and multilayer superlattices (for example, a low-dimensional channel in quantum cascade lasers). The main advantage of this methodology is the ability to ensure stability and increased speed of the computational model of the transparency of a channel with a different number of heterostructure layers, which makes it possible to optimize the stationary predictor block as part of the CVC kinetics algorithm in order to predict the operational parameters of a wide class of nanoelectronic devices, including their reliability indicators.

1. Makarov V.V., Maksimenko V.A., Selskii A.O. et al. THz-generation in semiconductor superlattice in the external tilted magnetic field. Dynamics and Fluctuations in Biomedical Photonics XII. International Society for Optics and Photonics. 2015. San Francisco. California. United States. V. 9322. P. 932211.
2. Makarov V.V., Selskii A.O., Maksimenko V.A. et al. Model and software package for studying and optimizing generation characteristics of semiconductor superlattices. Mathematical Models and Computer Simulations. 2017.V. 9. № 3. P. 359–368.
3. Makarov V.V., Maksimenko V.A., Ponomarenko V.I. et al. Modulation and detection of the THz range signals using the highest harmonics of the fundamental frequency of the superlattice-based generator for biomedical applications. Saratov Fall Meeting 2015: Third International Symposium on Optics and Biophotonics and Seventh Finnish-Russian Photonics and Laser Symposium (PALS). International Society for Optics and Photonics. 2016. Saratov. Russian Federation. V. 9917. P. 991722.
4. Hramov A.E., Makarov V.V., Koronovskii A.A. et al. Sub-THz/THz amplification in a semiconductor superlattice. 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE. 2015. China. Hong Kong. P. 1–2.
5. Makarov V.V., Hramov A.E., Koronovskii A.A. et al. Sub-terahertz amplification in a semiconductor superlattice with moving charge domains. Applied physics letters. 2015. V. 106. № 4. P. 043503.
6. Pavel'ev D.G., Vasil'ev A.P., Kozlov V.A. i dr. Diodnye geterostruktury dlya priborov teragercovogo diapazona chastot. Zhurnal radioelektroniki: elektronnyj zhurnal. 2016 (In Russian).
7. Zhao Y., Teng Y., Hao X. et al. Optimization of Long-Wavelength InAs/GaSb Superlattice Photodiodes With Al-Free Barriers. IEEE Photonics Technology Letters. 2019. V. 32. № 1. P. 19–22.
8. Jin C., Wang. F., Xu Q. et al. Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes. Journal of Crystal Growth. 2017. V. 417. P. 100–103.
9. Hoang A.M., Dehzangi A., Adhikary S. et al. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices. Scientific Reports. 2016. V. 6. P. 24144.
10. Zuo D., Liu R., Wasserman D. et al. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. Applied Physics Letters. 2015. V. 106. № 7. P. 071107.
11. Reyes D. F., Braza V., Gonzalo A. et al. Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications. Applied Surface Science. 2018. V. 442. P. 664–672.
12. Tsai Y.C., Lee M.Y., Li Y. et al. Simulation study of multilayer Si/SiC quantum dot superlattice for solar cell applications. IEEE Electron Device Letters. 2016. V. 37. № 6. P. 758–761.
13. Mittelstädt A., Greif L.A.T., Jagsch S.T. et al. Room Temperature Lasing of Terahertz Quantum Cascade Lasers Based on a Quantum Dot Superlattice. arXiv preprint arXiv:1912.03988. 2019. 
14. Kirch J.D., Kim H., Boyle C. et al. Proton implantation for electrical insulation of the InGaAs/InAlAs superlattice material used in 8–15 μm-emitting quantum cascade lasers. Applied Physics Letters. 2017. V. 110. № 8. P. 082102.
15. Maczka M., Pawlowski S. Efficient method for transport simulations in quantum cascade lasers. EPJ Web of Conferences. EDP Sciences. 2017. V. 133. P. 04003.
16. Prudaev I.A., Romanov I.S., Kopyev V.V. et al. Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping. Russian Physics Journal. 2016. V. 59. № 7. P. 934–937.
17. Saroosh R., Tauqeer T., Afzal S. et al. Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure. IET Optoelectronics. 2017. V. 11. V. 11. № 4. P. 156–162.
18. Vetrova N.A., Kuimov E.V., Meshkov S.A. et al. About AlGaAs-heterostructures CVC kinetics simulation. RENSIT. 2019. V. 11. № 3.  P. 299–306.
19. Vetrova N.A., Ivanov Y.A., Kuimov E.A. et al. Modeling of current transfer in AlAs/GaAs heterostructures with accounting for intervalley scattering. Radioelectron. Nanosyst. Inf. Technol. 2018. V. 10. № 1. P. 71–76.
20. Shasurin V.D., Vetrova N.A., Meshkov S.A. et al. Simulation of AlGaAs-heterostructures CVC kinetic due to degradation. Journal of Physics: Conference Series. IOP Publishing. 2019. V. 1410. № 1. P. 012055.
21. Silba-Vélez M., Pérez-Álvarez R., Contreras-Solorio D.A. Transmission and escape in finite superlattices with Gaussian modulation. Revista mexicana de física. 2015. V. 61. № 2. P. 132–136.
22. Dairi M., Brezini A., Zanoun A. Electronic Properties of Semiconductor Superlattices: Numerical Study of the Dimer Effect. Bulg. J. Phys. 2018. V. 45. P. 247–254.
23. Ryndyk D.A. Landauer-Büttiker method. Theory of Quantum Transport at Nanoscale. Cham: Springer. 2016. P. 17–54.
24. Triozon F., Roche S., Niquet Y.M. Introduction to Quantum Transport. Simulation of Transport in Nanodevices. 2016. P. 163–222.
25. Batı M. Electronic energy state and transmission properties study of parabolic double quantum well using Non-equilibrium Green function method. Turkish Journal of Materials. 2016. V. 1. № 1. P. 15–18.
26. Brown E.R., Zhang W.D., Growden T.A. et al. Strong Band-Edge Light Emission from InGaAs RTDs: Evidence for the Universal Nature of Resonant-and Zener-Co-Tunneling. arXiv preprint arXiv:1804.07666. 2018.
27. Zhang W.D., Brown E.R., Growden T. et al. A nonlinear circuit simulation of switching process in resonant-tunneling diodes. IEEE Transactions on Electron Devices. 2016. V. 63. № 12. P. 4993–4997.
28. Rajeev A., Sigler C., Earles T.L. et al. Design considerations for λ 3.0-to 3.5-μm-emitting quantum cascade lasers on metamorphic buffer layers. Optical Engineering. 2017. V. 57. № 1. P. 011017.
29. Ford W. Numerical linear algebra with applications: Using MATLAB. NY: Academic Press. 2015.
30. Agasieva S.V., Vetrova N.A., Gudkov A.G. i dr. Povyshenie nadezhnosti i kachestva GIS i MIS SVCh. Kniga 1. Pod red. A.G. Gudkova i V.V. Popova. M.: OOO «Avtotest». 2012 (In Russian).
31. Agasieva S.V., Vetrova N.A., Gudkov A.G. i dr. Povyshenie nadezhnosti i kachestva GIS i MIS SVCh. Kniga 2. Pod red. A.G. Gudkova i V.V. Popova. M.: OOO «Avtotest». 2013 (In Russian). 
32. Agasieva S.V., Vetrova N.A., Gudkov A.G. i dr. Povyshenie nadezhnosti i kachestva GIS i MIS SVCh. Kniga 3. Pod red. V.N. V'yuginova, A.G. Gudkova i V.V. Popova. M.: OOO NTP «Virazh-Centr». 2016 (In Russian).