V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Principal on innovative development, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Senior Specialist, GZ Pulsar. E-mail: kb-it@mail.ru
А.А. Makarov - Processing Engineer, GZ Pulsar. E-mail: makarov.pulsar@gmail.com
M.V. Pashkov - Processing Engineer, GZ Pulsar. E-mail: michaelpashkov@yandex.ru
R.I. Tychkin - Deputy Chief Engineer, GZ Pulsar

An innovative research on advanced industrial technology design of the microwave power transistors on AlGaN/GaN heterostructures was performed. The prospects of developing an electronic component base using the wide-gap semiconductor materials are discussed. The important issues of material choice for substrates as well as technological aspects of heteroepitaxial structures formation are reviewed in this article. An up-to-date full-cycle processing line for AlGaN/GaN power microwave transistors is introduced. Volt-ampere characteristics of fabricated transistor chip and multi-stage transistor devices are presented. A flip-chip mounting approach is suggested to solve the thermal resistance problem.