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Journal Achievements of Modern Radioelectronics №9 for 2014 г.
Article in number:
Aspects of heteroepitaxial growth processes for solid-state lighting applications
Keywords: nanotechnology heterostructures light-emitting diode
Authors:
V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
А.Yu. Voloshin - Head SKB «FIR SE», JSC «GZ Pulsar». E-mail: anvo@yandex.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru
Abstract:
In the article, a comparative analysis of substrate materials for heteroepitaxial growth of InGaN/GaN nanoheterostructures with multiple quantum wells used as lighting LEDs is conducted. Techniques of pre-epitaxial surface preparation of Si substrates and further approaches to eliminate the density of threading dislocations in GaN have been selected.
Pages: 53-56
References

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