350 rub
Journal Science Intensive Technologies №11 for 2013 г.
Article in number:
Semiconductor Light
Authors:
V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru N.N. Solovyev - Ph.D. (Phys.-Math.), Associate Professor, MSTU MIREA A.A. Shchuka - D. Sc. (Eng.), Professor, MSTU MIREA. E-mail: shchuka@mail.mipt.ru
Abstract:
High energy performance and efficiency as well as light quality make LED technologies a preferable way to get white light. An important advantage of LEDs is the absence of harmful components which means no special requirements are set to LED light sources utilization. Besides LED lighting sources - life time is up to 100,000 hours compared to 1,000 hrs for incandescents and 5 to 15 thousand hours for luminescence lamps. These benefits combined with lack of leakage radiation, low power of operation and operating costs, a relatively small weight and size make LED lighting fixtures fit for domestic and street lighting applications and competitive against incandescents and luminescence lamps.
Pages: 79-83
References

  1. Burobin V.A. Razrabotka vy'sokoe'konomichnogo svetodiodnogo klastera na nanostrukturax GaN // E'lektronnaya texnika. Seriya 2. Poluprovodnikovy'e pribory'. 2008. Vy'p. 1. S. 27-32.
  2. Burobin V.A., Konovalov A.M. Konstruktivno-texnologicheskie resheniya v proizvodstve yarkix svetodiodov na osnove geterostruktur InGaN/GaN/AlGaN // Materialy' Pervogo Mezhdunar. foruma po nanotexnologiyam (Moskva, 3-5 dekabrya 2009 g.). M. 2008.
  3. Arendarenko A.A., Burobin V.A., Sveshnikov Ju.N., Cy'plenkov I.N. Puti razrabotki MOS-gidridnoj texnologii polucheniya geterostruktur na osnove nitrida galliya s nanorazmerny'mi oblastyami dlya svetoizluchayushhix diodov // Materialy' Pervogo Mezhdunar. foruma po nanotexnologiyam (Moskva, 3-5 dekabrya 2009 g.). M. 2008.
  4. Burobin V.A. Reshenie problem e'nergosberezheniya. Vklad FGUP «GZ «Pul'sar» // E'lektronika. Nauka. Texnologiya. Biznes. 2009. №3. S. 48-51.
  5. Burobin V.A., Konovalov A.M., Matveev Ju.A. E'nergosberegayushhie istochniki osveshheniya na osnove svetodiodny'x matricz s ispol'zovaniem chipov na geterostrukturax GaN/InGaN // Materialy' Vtorogo Mezhdunar. foruma po nanotexnologiyam (Moskva, 6-8 oktyabrya 2009 g.). M. 2009.
  6. Burobin V.A., Zverev A.V., Jakunin A.S. Korporativnaya dorozhnaya karta. Put' krupnoserijnomu proizvodstvu svetodiodov otkry't // E'lektronika. Nauka. Texnologiya. Biznes. 2010. № 6.
  7. Arxangel'skij D.V., Burobin V.A. OAO «GZ «Pul'sar»: znachitel'ny'j vklad v e'nergosberezhenie // Moskovskie torgi. 2012.  № 5. S. 64-65.