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Journal Achievements of Modern Radioelectronics №9 for 2014 г.
Article in number:
Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density
Keywords: microwave electronics wide bandgap semiconductor materials nanodimensional heterostructures
Authors:
V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru
А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru
Abstract:
A comparative analysis of substrate materials for heteroepitaxial growth of InAlN/GaN structures is made, processing issues of InAlN/GaN heteroepitaxial structures formation are presented, effects of processing technology parameters on composition and characteristics of epitaxially grown InxAl1-xN layers are modelled.
Pages: 48-51
References

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