350 rub
Journal Science Intensive Technologies №11 for 2013 г.
Article in number:
Analysis of the Effect of Neutron Irradiation on the Size and Parameters of Optical Active Region and Current-Lumen-Voltage Characteristics of Quaternary AlGaInP and AlGaInN Heterostructures
Keywords: heterostructure radiation reliability degradation light emitting diodes current-voltage characteristic lumen-voltage characteristic
Authors:
O.R. Abdullaev - Ph. Sc. (Eng.), Director of Science and Production, JSC «Optron». E-mail: abd@optron.ru
L.V. Garshenin - Рh. Sc. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: gar@optron.ru
I.V. Rizhikov - Рh. Sc. (Eng.), Teaching Professor, MSUDI
Abstract:
At present, we are witnessing and, at a certain extent, participating in the revolution in optoelectronics and lighting as AlInGaP and AlInGaN heterostructures developed in the early 90s outperform devices of the first generation based on binary and ternary АIIIВV compounds and solutions in point of performance, reliability and color quality in the red to ultraviolet ranges. Despite the large amount of publications on design, technology and application of new generation LEDs known in foreign literature, almost no work on radiation degradation and radiation resistance assessment of a new generation LEDs is present. For the nuclear electronics, aerospace, airborne and military applications data on radiation stability of products are necessary and in some cases decisive. In this regard, the study of radiation degradation and radiation hardness assessment of new generation LEDs on AlInGaP and AlInGaN heterostructures appear relevant for their use in special equipment.
Pages: 94-103
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