Издательство РАДИОТЕХНИКА

V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Principal on innovative development, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Senior Specialist, GZ Pulsar. E-mail: kb-it@mail.ru
А.А. Makarov - Processing Engineer, GZ Pulsar. E-mail: makarov.pulsar@gmail.com
M.V. Pashkov - Processing Engineer, GZ Pulsar. E-mail: michaelpashkov@yandex.ru
R.I. Tychkin - Deputy Chief Engineer, GZ Pulsar

Semiconductor Light

V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru N.N. Solovyev - Ph.D. (Phys.-Math.), Associate Professor, MSTU MIREA A.A. Shchuka - D. Sc. (Eng.), Professor, MSTU MIREA. E-mail: shchuka@mail.mipt.ru

Perspective Application of Cubic Boron Nitride for Electronic Devices Fabrication

O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, Place of employment: JSC «Optron». E-mail: abd@optron.ru
A.S. Yakunin - Director of Department for RF Electronics Production, Сhamber of Commerce and Industry of the Russian Federation

Metastable spin transfer in layered heterosructures with adynamic supersymmetric state

L.E. Gurskij, G.V. Krylova

The current state and the prospects of microwave device development at JSC «Svetlana»

V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg

Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru
А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

Aspects of heteroepitaxial growth processes for solid-state lighting applications

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
А.Yu. Voloshin - Head SKB «FIR SE», JSC «GZ Pulsar». E-mail: anvo@yandex.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

Aspects of heteroepitaxial growth processes for solid-state lighting applications

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru А.Yu. Voloshin - Head SKB «FIR SE», JSC «GZ Pulsar». E-mail: anvo@yandex.ru N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru

O.V. Losev and ways of development of Russian microelectronics in the 21st century

S.A. Gilyov - Leading Engineer, Museum of science «Nizhny Novgorod Radiolaboratory», Lobachevsky State University of Nizhny Novgorod (Nizhny Novgorod). E-mail: serangil-nrl@yandex.ru M.A. Novikov - Ph. D. (Phys.-Math.), Leading Research Scientist, Institute for Physics of Microstructures of RAS (Nizhny Novgorod). E-mail: mnovik@ipm.sci-nnov.ru A.A. Potapov - Dr. Sc. (Phys.-Math.), Professor, Main Research Scientist, Kotel\'nikov IRE of RAS (Moscow); President of cooperative Chinese-Russian laboratory of informational technologies and signals fractal processing (China, Guanzhou). E-mail: potapov@cplire.ru A.E. Rassadin - co-ordinator of united scientific and educational programmes of Nizhny Novgorod regional division of A.S. Popov-s STSREC (Nizhny Novgorod). E-mail: brat_ras@list.ru

Aspects of InAlN/InGaN heterostructures epitaxial growth for HEMT transistors of communication systems

A.A. Arendarenko - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: arendarenko.pulsar@mail.ru V.N. Danilin - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: danilin.pulsar@mail.ru А.А. Makarov - Leading Expert, JSC «GZ «Pulsar» (Moscow). E-mail: a.makarov@gz-pulsar.ru R.I. Tichkin - Head of Department, JSC «GZ «Pulsar» (Moscow). E-mail: kb-it@mail.ru

Method and equipment for measuring of low-frequency noise

V.N. Vyuginov - Ph. D. (Phys.-Math.), Director of Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: vyuginov@svetlana-ep.ru A.G. Gudkov - Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: profgudkov@gmail.com V.A. Dobrov - Head of Department, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: dobrov@svetlana-ep.ru T.Yu. Kudryashova - Senior Lecturer, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru A.V. Mescheryakov - Ph. D. (Eng.), Associate Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru V.G. Usychenko - Dr. Sc. (Phys.-Math.), Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: usychenko@rphf.spbstu.ru V.D. Shashurin - Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: schashurin@bmstu.ru S.I. Vidyakin - Post-graduate Student, Bauman Moscow State Technical University. E-mail: bmsturl@gmail.com S.V. Chizhikov - Assistant, Bauman Moscow State Technical University. E-mail: chigikov95@mail.ru

The results of the Russian-Belarusian scientific and technical cooperation on creation of new types of nanoheterostructures

V.V. Popov - Ph.D. (Eng. S.), President, «Svetlana» JSC (Moscow) V.M. Ustinov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Ioffe Institute (Moscow) V. P. Chalyi - Ph.D. (Phys.-Math.), Director, «Svetlana-Rost» CJSC D.M. Krasovitskii - Ph.D. (Chem.), Chief Designer, «Svetlana-Rost» CJSC (Moscow) I.S. Tarasov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Ioffe Institute (Moscow) V.A. Klevtsov - Ph.D. (Eng.), Deputy General Director for Scientific and Technological Development, «Svetlana» JSC S.A. Kalinin - Head of «Scientific-technical Development» Department, «Svetlana» JSC Yu.P. Yakovlev - Dr.Sc. (Phys.-Math.), Chief Research Scientist, Ioffe Institute (Moscow) N.A. Maleev - Ph.D. (Eng.), Senior Research Scientist, Ioffe Institute (Moscow) S.V. Ivanov - Dr.Sc. (Scientist), Chief Research Scientist, Ioffe Institute (Moscow) E-mail: post@mail.ioffe.ru

Magnetoresistance in the heterostructure manganite/intermetallic compound

A.S. Grishin - Engineer, Kotel-nikov Institute of Radio Engineering; Student, Moscow Technological University MIREA E-mail: alex1995@hitech.cplire.ru A.A. Klimov - Ph.D. (Phys.-Math.), Senior Research Scientist, Kotel-nikov Institute of Radio Engineering;иAssociate Professor, Moscow Technological University MIREA G.A. Ovsyannikov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Kotel-nikov Institute of Radio Engineering (Moscow) A.M. Petrzhik - Ph.D. (Phys.-Math.), Research Scientist, Kotel-nikov Institute of Radio Engineering, Moscow V. L. Preobrazhensky - Dr.Sc. (Phys.-Math.), Head of Laboratory, Wave Research Center (WRC) of Prokhorov General Physics Institute (PGPI) (Moscow) N. Tiercelin - Ph.D., Senior Research Scientist, International Associated Laboratory LEMAC-LICS: IEMN, UMR CNRS, PRES Lille Nord de France, ECLille, Villeneuve d\'Ascq, France P. Pernod - Ph.D,. Professor, Head of Laboratory, International Associated Laboratory LEMAC-LICS: IEMN, UMR CNRS, PRES Lille Nord de France, ECLille, Villeneuve d\'Ascq, France

Element base of microwave MIC for microwave radiothermometry

S.V. Chizhikov – Post-graduate Student,

Department of Instrumentation Technology, Bauman Moscow State Technical University

E-mail: chigikov95@mail.ru

Yu.V. Solov’ev – Ph.D. (Eng.), Deputy Director, JSC “Svetlana-Electronpribor” (St.-Petersburg);

Senior Research Scientist, Research Institute of Radioelectronics and Laser Engineering at Bauman Moscow State Technical University

E-mail: solovev@svetlana-ep.ru

Analysis of the influence of the base transistor topology on the static characteristics in order to determine the optimal design of the transistor as part of the MIC for microwave radiothermometry

S.V. Chizhikov¹, V.G. Tikhomirov², G.A. Gudkov³

Bauman Moscow State Technical University (Moscow, Russia)
St.-Petersburg State Electrotechnical University «LETI» (St.-Petersburg, Russia)
HYPERION ltd. (Moscow, Russia)

1 chigikov95@mail.ru, 2 vv11111@yandex.ru, 3 ooo.giperion@gmail.com

Modeling of the transparency of low-dimensional channel with quantum confinement in semiconductor devices based on 2D-structures with transverse current transfer

N.A.Vetrova¹, A.A. Filyaev², V.D. Shashurin³

1, 2, 3 Bauman Moscow State Technical University (Moscow, Russia),

1 vetrova@bmstu.ru; 2 alex.filyaev.98@gmail.com; 3 schashurin@bmstu.ru

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Than Phyo Kyaw

Institute of Quantum Physics and Nanoelectronics of the National Research University "MIET" (Moscow, Russia)

A Perseptron network for prediction of the electrical characteristics of a resonant-tunnel diode

N.A. Vetrova1, K.P. Pchelintsev2, V.D. Shashurin3

1–3 Bauman Moscow State Technical University (Moscow, Russia)

Topologically oriented approach to the choice of a method for modeling the transparency of heterostructural channels in nanoelectronic devices

V.D. Shashurin1, N.A. Vetrova2, E.V. Kuimov3, K.P. Pchelintsev4, A.S. Aleksandrov5

1,3–5 Bauman Moscow State Technical University (Moscow, Russia)
2 Peoples' Friendship University of Russia (Moscow, Russia)

New vertical heterostructures based on monolayers of 2D semiconductor materials: atomic and electronic structures

O.E. Glukhova − Dr.Sc. (Phys.-Math.), Professor,

Head of Department of Radiotechnique and Electro-dynamics,

Saratov National Research State University named after N. G. Chernyshevsky

E-mail: glukhovaoe@info.sgu.ru

M.M. Slepchenkov − Ph.D. (Phys.-Math.), Associate Professor,

Department of Radiotechnique and Electrodynamics,

Saratov National Research State University named after N. G. Chernyshevsky

E-mail: slepchenkovm@mail.ru

D.A. Kolosov − Post-graduate Student, Junior Research Scientist,

Department of Radiotechnique and Electrodynamics,

Saratov National Research State University named after N. G. Chernyshevsky E-mail: demkol.93@mail.ru

Simulation of nanoelectronic device structures based on 2D materials

I.I. Abramov1, N.V. Kalameitsava2, V.A. Labunov3, I.A. Romanova4, I.Yu. Shcherbakova5

1–5 Belarusian State University of Informatics and Radioelectronics (Minsk, Belarus)