Journals
Books
Articles by keyword nanotransistor
Regulation of Logic Gate Characteristics for Fully Depleted SOI CMOS Nanotransistors
N.V. Masalsky
SIMULATIONOFCHARACTERISTICS OF LOGIC GATE AND ARITHMETIC UNITS FOR FULLY DEPLETED SOI CMOS NANOTRANSISTORS
N.V. Masalsky
Nanoelectronics Devices
Shchuka A. A.
Low power 1-bit full adder characteristics for fully depleted SOI CMOS nanotransistors
N.V. Masalsky
Minimizing Short Channel Effects to Performance of Double Gate-Underlap Design SOI CMOS Nanotransistors
N.V. Masalsky
Simulation of the potential temperature distribution in SOI CMOS nanotransistors with «no overlap» architecture
N.V. Masalski - Ph.D. (Phys.-Math.), Senior Researcher, Research Institute for System Studies of RAS, Moscow. E-mail: volkov@niisi.ras.ru
Threshold characteristics of the double gate symmetric MOSFETs nanotransistor with a Gaussian vertical doping profile
N.V. Masalskii - Ph.D. (Phys.-Math.), the Manager Sector, Research Institute for System Studies of RAS, Moscow. E-mail: volkov@niisi.ras.ru
Graphene based terahertz transistor
M.V. Davidovich - Dr.Sc. (Phys.-Math.), Professor, Saratov State University E-mail: davidovichmv@info.sgu.ru
Nanoscale silicon field effect transistors for biosensors

N.V. Masalsky – Ph. D. (Phys-Math.), Leader Research Scientist, 

Federal scientific center, Research Institute for System Research of the RAS (Moscow)

E-mail: volkov@niisi.ras.ru

Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS" 

E-mail: volkov@niisi.ras.ru

Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS" 

E-mail: volkov@niisi.ras.ru

Sensory properties of fin surrounding gate nanotransistors

N.V. Masalsky

Federal State Institution «Scientific Research Institute for System Analysis of RAS» (Moscow, Russian)

Vertical CMOS nanotransistors with a conical channel for three-dimensional integrated circuits

Н.В. Masalsky1

1 Federal State Institution "Scientific Research Institute for System Analysis of RAS" (Moscow, Russia)

Sensory properties of a complementary pair of silicon field-effect nanotransistors with cylindrical geometry

N.V Masalsky1

1 Federal State Institution “Scientific Research Institute for System Analysis of the Russian Academy of Sciences” (Moscow, Russia)

Variations in the characteristics of low-voltage logic gates based on vertical silicon nanotransistors with a conical channel

N.V. Masalsky1

1 Research Institute for Systems Research of the Russian Academy of Sciences (Moscow, Russia)
volkov@niisi.ras.ru

An effective method of pH-metry based on a complementary scheme of ion-sensitive nanotransistors

N.V. Masalsky1

1 Federal State Institution «Scientific Research Institute for System Analysis of the Russian Academy of Sciences» (Moscow, Russia)
1 Masal1960@yandex.ru