Journals
Books
Articles by keyword gate
Minimizing Short Channel Effects to Performance of Double Gate-Underlap Design SOI CMOS Nanotransistors
N.V. Masalsky
The application of mathematical modeling quaternions invector - ternary transmitter
Y.S. Morozova, D.G. Milovzorov, A.S. Dyachkov, A.R. Ardashirov
Conditions to improve speed and minimize complexity of building the FFT devices
A.Y. Stalnoy, V.O. Millerov
Silicon transistor with the nanowire channel from non-uniformly doped silicon on insulator
S.V. Amitonov, D.E. Presnov, V.A. Krupenin
Set transistor from highly doped silicon on insulator
D. E. Presnov - Ph.D. (Phys.-Math.), Senior Research Scientist, Department of microelectronics, Skobeltsyn Institute of Nuclear Physics, M.V.Lomonosov Moscow State University. E-mail: denis.presnov@phys.msu.ru
S. V. Amitonov - Post-Graduate Student, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: sam-msu@yandex.ru
V.S Vlasenko - Head of Department of Research and Industrial Material Science, OPTEC LLC, Moscow, Russia. E-mail: vlasenko@optecgroup.com
V. A. Krupenin - Ph.D. (Phys.-Math.), Senior Research Scientist, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: vladimir.krupenin@phys.msu.ru
Set transistor from highly doped silicon on insulator
D. E. Presnov - Ph.D. (Phys.-Math.), Senior Research Scientist, Department of microelectronics, Skobeltsyn Institute of Nuclear Physics, M.V.Lomonosov Moscow State University. E-mail: denis.presnov@phys.msu.ru
S. V. Amitonov - Post-Graduate Student, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: sam-msu@yandex.ru
V.S Vlasenko - Head of Department of Research and Industrial Material Science, OPTEC LLC, Moscow, Russia. E-mail: vlasenko@optecgroup.com
V. A. Krupenin - Ph.D. (Phys.-Math.), Senior Research Scientist, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: vladimir.krupenin@phys.msu.ru
Multygate 3D transistor with field modulation of negative charged excitons transport
L.I. Gursky - Corresponding Member NANB, BGUIR
G.V. Krylova - Ph.D. (Phys.-Math.), Leading Research Scientist, BGU
A new method of gate dielectric degradation analysis in nigh-speed field-effect transistor
V.E. Drach - Ph. D. (Eng.), Associate Professor, EIU1-KF, Kaluga branch of the Bauman MSTU. E-mail: drach@kaluga.org
A.V. Rodionov - Ph. D. (Eng.), Associate Professor, EIU2-KF, Kaluga branch of the Bauman MSTU. E-mail: andviro@gmail.com
Threshold characteristics of the double gate symmetric MOSFETs nanotransistor with a Gaussian vertical doping profile
N.V. Masalskii - Ph.D. (Phys.-Math.), the Manager Sector, Research Institute for System Studies of RAS, Moscow. E-mail: volkov@niisi.ras.ru
Realization of FFT algorithm based on logical elements FPGA without cores and megafunctions
S.I. Konokhova - Software Engineer, LTD «Special Technological Center» (St. Petersburg)
Hardware implementation of charge pumping technique
V.E. Drach - Ph. D. (Eng.), Associate Professor, Department «Design and manufacturing of electronic equipment», Kaluga branch of the Bauman MSTU. E-mail: drach@kaluga.org A.V. Rodionov - Ph. D. (Eng.), Associate Professor, Department «Computer systems and networks», Kaluga branch of the Bauman MSTU. E-mail: andviro@gmail.com I.V. Chukhraev - Ph. D. (Eng.), Associate Professor, Head of Department «Computer systems and networks», Kaluga branch of the Bauman MSTU. E-mail: igor.chukhraev@mail.ru
Electrooptical device for concurrent control of instrument panel responses
S.V. Degtyarev - Dr.Sc. (Eng.), Professor, Department of Information Systems and Technologies, Southwest State University (Kursk) Y.A. Lysenko - Chief Engineer E-mail: yanlys1@yandex.ru E.N. Ivanova - Ph.D. (Eng.), Senior Lecturer, Department of Computer Engineering, Southwest State University (Kursk) E-mail: sergeyd12@gmail.com A.I. Katykhin - Ph.D. (Eng.), Associate Professor, Department of Information Systems and Technologies, Southwest State University (Kursk) E-mail: katykhin.a@gmail.com
Laser generation on weak modes in graphene structure with asymmetric unit cell

K.V. Mashinsky1, V.V. Popov2, D.V. Fateev3

1−3 Kotelnikov IRE of RAS, Saratov Branch (Saratov, Russia)

Vertical CMOS nanotransistors with a conical channel for three-dimensional integrated circuits

Н.В. Masalsky1

1 Federal State Institution "Scientific Research Institute for System Analysis of RAS" (Moscow, Russia)