V.E. Drach - Ph. D. (Eng.), Associate Professor, Department «Design and manufacturing of electronic equipment», Kaluga branch of the Bauman MSTU. E-mail: drach@kaluga.org A.V. Rodionov - Ph. D. (Eng.), Associate Professor, Department «Computer systems and networks», Kaluga branch of the Bauman MSTU. E-mail: andviro@gmail.com I.V. Chukhraev - Ph. D. (Eng.), Associate Professor, Head of Department «Computer systems and networks», Kaluga branch of the Bauman MSTU. E-mail: igor.chukhraev@mail.ru

The investigation and the monitoring of electrophysical characteristics are the most important parts in modern CMOS technology. To successfully resolve this task of sub-micron technology, it is necessary to use the most informative techniques of investigation, such as charge pumping, investigation of gate-induced drain leakage, multi-level current stress technique, etc. Hardware implementation of these techniques requires high sensitivity and accuracy of measurement equipment, what is not a trivial technical task. Among the investigation techniques above, the charge pumping technique is highlighted. Charge pumping is a powerful technique for MOSFET interface characterization, it allows to measure the interface state density at the substrate-dielectric interface and, furthermore, to determine the energy distributions over a large part of the semiconductor energy gap. Charge pumping allows to characterize both uniform and non-uniform degradation damage in short-channel MOSFET with nanoscale gate oxide. The integral version of charge pumping technique has the outstanding sensitivity and resolution. Based on a thorough insight in the electrophysical mechanisms that are governing the charge pumping current, the interpretation of the results has been recently improved, leading to a widespread use of the technique. The sensitivity of measurement equipment, using to build an experimental setup, becomes a limiting factor to implement the charge pumping technique. In this paper, a hardware implementation of charge pumping technique is offered. Moreover, a structure schematics of an experimental setup for both investigation and monitoring of electro-physical parameters of submicron MOSFET gate dielectric is proposed. To meet the above requirements, the standard laboratory equipment was used. Pico ammeter was used as a core. The stabilized power supplies were used to feed the system. The pulse generators were used to form influence pulses. It is necessary to emphasize that special events are needed to extend dynamic range and to avoid leakage, specifically, fluoropolymer insulation and the use of shielded connection cables. Also, a special commutation module is required for interconnections of devices. The described laboratory equipment could be referred to a low-cost segment.

 

1. Brugler J.S., Jespers P.G.A. Charge pumping in MOS devices // IEEE Transactions on Electron Devices. 1969. V. 16. № 3. P. 297−302.
2. Drach V.E., CHukhraev I.V. Metodika monitoringa generacii zarjada v nanorazmernom diehlektrike MDP-tranzistora // Nauka i obrazovanie: nauchnoe izdanie MGTU im. N.EH. Baumana. 2012. № 2. S. 53.
3. Baklanov M., Green M., Maex K. Dielectric Films for Advanced Microelectronics. Chichester: Wiley. 2007. 426 p.
4. Drach V.E., Rodionov A.V., CHukhraev I.V. Metod nakachki zarjada dlja issledovanija podzatvornogo diehlektrika nanorazmernojj tolshhiny // Voprosy radioehlektroniki. 2016. № 2. S. 71−76.
5. Drach V.E., Smirnova O.M., CHukhraev I.V. Generacija zarjada v tranzistorakh s nanorazmernym diehlektrikom // Voprosy radioehlektroniki. 2012. T. 1. № 3. S. 115−122.
6. Groeseneken G., Maes H.E. Basics and applications of charge pumping in submicron MOSFETs // Microelectronics Reliability. 1998. V. 38. № 9. P. 1379−1389.
7. Viswanathan S.R., Rao V.R. Application of charge pumping technique for sub-micron MOSFET characterization // Microelectronic Engineering. 1998. V. 40. P. 131−146.
8. Kerber A., Cartier E., Pantisano L., Degraeve R., Groeseneken G., Maes H.E., Schwalke U. Charge trapping in SiO2/HfO2 gate dielectrics: comparison between charge-pumping and pulsed ID-VG // Microelectronic Engineering. 2004. V. 72. P. 267−272.
9. Oreshkov M.V., Soldatov V.S. Izmeritelnyjj kompleks ehlektrofizicheskikh metodov dlja uglublennogo analiza submikronnojj komplementarnojj tekhnologii // Vestnik MEHI. 2012. № 1. S. 102−107.
10. Heremans P., Witters J., Groeseneken G., Maes H.E. Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation // IEEE Transactions on Electron Devices. 1989. V. 36. № 7. P. 1318−1335.
11. Groeseneken G., Maes H.E., Beltran N., De Keersmaecker P.F. A reliable approach to charge-pumping measurements in MOS transistors // IEEE Transactions on Electron Devices. 1984. V. 31. № 1. P. 42−53.
12. Sahhaf S., Degraeve R., Cho M., De Brabanter K., Roussel Ph.J., Zahid M.B., Groeseneken G. Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2 /HfSiO(N) // Microelectronic Engineering. 2010. V. 87. P. 2614−2619.