No. 11, 2013

1. Государственному заводу «Пульсар» - 60 лет pp. 4

Power electronics

1. Development Perspectives of Power Electronic Devices on Gallium Nitride V.A. Burobin pp. 5-12
2. Power Transistors in AlN Metal/Ceramic Packages Л.М. Пазинич, Ю.М. Печий, О.Л. Шкарапут pp. 13-16
3. New Clamping Si Diode Technology Integrated on a Heatsink О.Р. Абдуллаев, А.С. Дренин, А.С. Ларюшкин, Е.С. Роговский, М.Ю. Филатов pp. 19-21

Microwave electronic devices and technology

1. Relevant Characteristics of Epitaxial Growth Technology of Microwave and RF PIN-Diodes at JSC «Optron» and its Perspectives О.Р. Абдуллаев, Т.П. Колмакова, М.В. Меженный, М.Ю. Филатов pp. 22-29
2. Industrial Process Design of Microwave Transistors on Heteroepitaxial Gallium Nitride Structures at State Plant Pulsar V.A. Burobin, N.I. Kargin, А.М. Konovalov, А.А. Makarov, M.V. Pashkov, R.I. Tychkin pp. 30-36
3. Innovative Technologies in Production of Microwave Solid State Electronic Components В.А. Буробин, Л.М. Пазинич pp. 37-44
4. Importance of Layer-to-Layer Deprocessing of Chips for the Failure Analysis of State-of-Art Integrated Circuits V.A. Burobin, R.А. Milovanov, А.А. Shchuka pp. 45-49
5. The Effects of Exposure to Fast Electron Radiation on High-Frequency Si PIN diodes and Schottky Barrier Diodes О.Р. Абдуллаев, А.С. Дренин, П.Б. Лагов, М.Ю. Филатов pp. 51-56
6. Application of Plasma-Chemical Etching for pin Diode Technology О.Р. Абдуллаев, Е.С. Роговский, М.Ю. Филатов pp. 57-60
7. Guidelines of Information Technologies Development in the Comprehensive Automation at Research and Manufacturing Association «Pulsae T.V. Boshnyak, V.A. Burobin, R.I. Tychkin pp. 61-70

Optoelectronics

1. Semiconductor LED Electronics at Multisystem Cluster "Pulsar" JSC "Ruselectronics" В.А. Буробин, А.Ю. Волошин, А.В. Зверев, В.И. Холодилов, В.Н. Щербаков pp. 71-78
2. Semiconductor Light V.A. Burobin, N.N. Solovyev, A.A. Shchuka pp. 79-83
3. Investigation of Cubic Boron Nitride Using the Colour Cathodoluminescence (CCL) and High Resolution Spectral Analysis in a Scanning Electron Microscope O.R. Abdullaev, A.I. Gabelchenko, P.V. Ivannikov, A.S. Yakunin pp. 84-88
4. Perspective Application of Cubic Boron Nitride for Electronic Devices Fabrication O.R. Abdullaev, A.S. Yakunin pp. 89-92
5. Analysis of the Effect of Neutron Irradiation on the Size and Parameters of Optical Active Region and Current-Lumen-Voltage Characteristics of Quaternary AlGaInP and AlGaInN Heterostructures O.R. Abdullaev, L.V. Garshenin, I.V. Rizhikov pp. 94-103