Development Perspectives of Power Electronic Devices on Gallium Nitride

V.A. Burobin

Development Perspectives of Power Electronic Devices on Gallium Nitride

V.A. Burobin¹

research article Pages: 5-12

¹ Ph.D. (Eng.), General Director, GZ Pulsar

Keywords: wide bandgap semiconductors GaN heterostructures GaN-on-Si

Abstract

This article reviews advantages of wide bandgap semiconductor devices, the state-of-art production of wide bandgap semiconductor electronics in Russia and worldwide, relevance and perspectives of new power electronic components development on the base of wide bandgap semiconductors, as well as some aspect of R&D and manufacturing fundamentals formation for development and production of competitive solid state GaN and GaN-on-Si power electronics on the site of State Plant Pulsar.

How to cite

Буробин В.А. Перспективы развития приборов силовой электроники на основе нитрида галлия // Наукоемкие технологии. 2013. № 11. С. 5–12.

References

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GaN and ZnO-based Materials and Devices, Series: Springer Series in Materials Science, V. 156 / S. Pearton (Ed.). Springer. 2012. 485 s.
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Burobin V.A., Kry'mko M.M. Perspektivy' razvitiya otechestvennoj silovoj e'lektroniki v mul'tisistemnom klastere NPO «Pul'sar» OAO «Rossijskaya e'lektronika» // Materialy' XI otraslevoj nauchno-texn. konf. «Sostoyanie i perspektivy' razvitiya otechestvennoj mikroe'lektroniki». Novosibirsk. 2012.

[1] Li T., Mastro M., Dadgar A. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics. CRC Press. 2010. 593 s.

[2] GaN and ZnO-based Materials and Devices, Series: Springer Series in Materials Science, V. 156 / S. Pearton (Ed.). Springer. 2012. 485 s.

[3] Texnologiya vy'rashhivaniya kristallov nitrida galliya / pod red. D. E'rentrauta i dr. / per. s angl. K.V. Judinczeva // Mir radioe'lektroniki. M.: Texnosfera. 2011.

[4] Jin D., J. A. del Alamo. Mechanisms responsible for dynamic on-resistance in GaN high-voltage HEMTs // Proc. IEEE 24th Int. Symp. Power Semicond. Dev. ICs, Brugge, Belgium. Jun. 2012. P. 333-336.

[5] Burobin V.A., Kry'mko M.M. Perspektivy' razvitiya otechestvennoj silovoj e'lektroniki v mul'tisistemnom klastere NPO «Pul'sar» OAO «Rossijskaya e'lektronika» // Materialy' XI otraslevoj nauchno-texn. konf. «Sostoyanie i perspektivy' razvitiya otechestvennoj mikroe'lektroniki». Novosibirsk. 2012.