V.А. Burobin

В.А. Буробин

13 articles 2010–2015

2015

Aspects of heteroepitaxial growth processes for solid-state lighting applications Nanotechnology : the development , application - XXI Century, No. 1, 2015 pp. 27-30
Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density Nanotechnology : the development , application - XXI Century, No. 1, 2015 pp. 22-26

2014

Aspects of heteroepitaxial growth processes for solid-state lighting applications Achievements of Modern Radioelectronics, No. 9, 2014 pp. 53-56
Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density Achievements of Modern Radioelectronics, No. 9, 2014 pp. 48-51

2013

Semiconductor Light Science Intensive Technologies, No. 11, 2013 pp. 79-83
Semiconductor LED Electronics at Multisystem Cluster "Pulsar" JSC "Ruselectronics" Science Intensive Technologies, No. 11, 2013 pp. 71-78
Guidelines of Information Technologies Development in the Comprehensive Automation at Research and Manufacturing Association «Pulsae Science Intensive Technologies, No. 11, 2013 pp. 61-70
Importance of Layer-to-Layer Deprocessing of Chips for the Failure Analysis of State-of-Art Integrated Circuits Science Intensive Technologies, No. 11, 2013 pp. 45-49
Innovative Technologies in Production of Microwave Solid State Electronic Components Science Intensive Technologies, No. 11, 2013 pp. 37-44
Industrial Process Design of Microwave Transistors on Heteroepitaxial Gallium Nitride Structures at State Plant Pulsar Science Intensive Technologies, No. 11, 2013 pp. 30-36
Development Perspectives of Power Electronic Devices on Gallium Nitride Science Intensive Technologies, No. 11, 2013 pp. 5-12

2010

Transistors on Heterostructures Aln/GaN for WiMAX Вакуумная, плазменная и твердотельная электроника, No. 1, 2010 pp. 39-43
Transistors on heterostructures ALN/GAN for WIMAX Science Intensive Technologies, No. 7, 2010 pp. 39-43