Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

V.А. Burobin; N.I. Kargin; А.М. Konovalov; А.А. Makarov; А.А. Shchuka

Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

V.А. Burobin¹, N.I. Kargin², А.М. Konovalov³, А.А. Makarov⁴, А.А. Shchuka⁵

research article Pages: 22-26

¹ Ph.D. (Eng.), General Director, JSC «GZ Pulsar»
² Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI)
³ Head SKB SSP, JSC «GZ Pulsar»
⁴ Leading Expert, JSC «GZ Pulsar»
⁵ Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology

Keywords: microwave electronics wide bandgap semiconductor materials nanodimensional heterostructures

Abstract

A comparative analysis of substrate materials for heteroepitaxial growth of InAlN/GaN structures is made, processing issues of InAlN/GaN heteroepitaxial structures formation are presented, effects of processing technology parameters on composition and characteristics of epitaxially grown InxAl1-xN layers are modelled.

How to cite

Буробин В.А., Каргин Н.И., Коновалов А.М., Макаров А.А., Щука А.А. Особенности разработки процесса выращивания структур InAlN/GaN методом газофазной эпитаксии из металлорганических соединений, применяемых в СВЧ-транзисторах с высокой удельной выходной мощностью // Нанотехнологии: разработка, применение - XXI век. 2015. № 1. С. 22–26.

References

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Burobin V.A. Razrabotka konstrukcii i promyshlennojj tekhnologii izgotovlenija moshhnogo SVCH tranzistora na baze geteroehpitaksialnojj struktury AlGaN/GaN // Oboronnyjj kompleks - nauchno-tekhnicheskomu progressu Rossii. 2012. № 4. S. 66-71.
Lobanova A.V. et al. AlInN MOVPE: growth chemistry and analysis of trends // Journal of Crystal Growth. 2012. T. 352. № 1. S. 199-202.
Medjdoub F. et al. Status of the emerging InAlN/GaN power HEMT technology // Open Electrical & Electronic Engineering Journal. 2008. T. 2. S. 1-7.
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[1] Burobin V.A. Novoe pokolenie ehlektronnojj tekhniki: Perspektivy razvitija priborov silovojj ehlektroniki na osnove nitrida gallija // Tekhnopolis XXI. 2012. Sentjabr. S. 18-19.

[2] Burobin V.A. Razrabotka konstrukcii i promyshlennojj tekhnologii izgotovlenija moshhnogo SVCH tranzistora na baze geteroehpitaksialnojj struktury AlGaN/GaN // Oboronnyjj kompleks - nauchno-tekhnicheskomu progressu Rossii. 2012. № 4. S. 66-71.

[3] Lobanova A.V. et al. AlInN MOVPE: growth chemistry and analysis of trends // Journal of Crystal Growth. 2012. T. 352. № 1. S. 199-202.

[4] Medjdoub F. et al. Status of the emerging InAlN/GaN power HEMT technology // Open Electrical & Electronic Engineering Journal. 2008. T. 2. S. 1-7.

[5] Lee D.S. et al. InAlN/GaN HEMTs with AlGaN back barriers // Electron Device Letters, IEEE. 2011. T. 32. № 5. S. 617‑619.

Abstract

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