Industrial Process Design of Microwave Transistors on Heteroepitaxial Gallium Nitride Structures at State Plant Pulsar

An innovative research on advanced industrial technology design of the microwave power transistors on AlGaN/GaN heterostructures was performed. The prospects of developing an electronic component base using the wide-gap semiconductor materials are discussed. The important issues of material choice for substrates as well as technological aspects of heteroepitaxial structures formation are reviewed in this article. An up-to-date full-cycle processing line for AlGaN/GaN power microwave transistors is introduced. Volt-ampere characteristics of fabricated transistor chip and multi-stage transistor devices are presented. A flip-chip mounting approach is suggested to solve the thermal resistance problem.