Aspects of InAlN/InGaN heterostructures epitaxial growth for HEMT transistors of communication systems
- 1,2 Senior Research Scientist, JSC «GZ «Pulsar» (Moscow)
- 3 Leading Expert, JSC «GZ «Pulsar» (Moscow)
- 4 Head of Department, JSC «GZ «Pulsar» (Moscow)
Keywords:
microwave electronicswide bandgap semiconductor materialsnanodimensional heterostructuresgallium nitride
Abstract
Specific details of epitaxial growth of GaN-based nanoheterostructures for microwave transistors are considered, simulation of epitaxial growth for InxAl1-xN and GaN layers was carried out for Close-Coupled Showerhead reactor. Epitaxial structures with low sheet resistivity in range 203-224 Ohm/square are obtained.
How to cite
Арендаренко А.А., Данилин В.Н., Макаров А.А., Тычкин Р.И. Особенности процессов эпитаксиального роста наногетероструктур InAlN/InGaN для СВЧ-транзисторов коммуникационных систем // Успехи современной радиоэлектроники. 2016. № 1. С. 89–93.
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