Application of Plasma-Chemical Etching for pin Diode Technology
- 1 к.т.н., директор по науке и производству, ОАО «Оптрон»
- 2 вед. инженер, ОАО «Оптрон»
- 3 к.т.н., зам. директора СКБ, ОАО «Оптрон»
Abstract
In this article results of high-density plasma-induced chemical etching of silicon with RIE reactor Plazmakom-203 for wafer thinning and mesa structure formation with following aluminosilicate glass covering are presented.
A s a result process conditions for obtaining up to 400 μm high silicon mesastructures and up to 200 μm deep trenches at input aperture of 10-60 μm with sidewall angle of 8991 ° were found. The undercut profile was 0,23 μm, sidewall roughness - ca. 0,05 μm for (100) silicon and ca. 1 μm - for (111) silicon, average etch rate - 35 μm/min. (depending on the etch profile/orientation ratio of silicon), selectivity to the ФП-25 photoresist mask was about 60, selectivity to the aluminium mask - above 500. The mentioned processes can be used in PIN and Schottky diode and stabilitron process technology.
How to cite
Абдуллаев О.Р., Роговский Е.С., Филатов М.Ю. Использование плазмохимического травления в технологии получения pin-диодов // Наукоемкие технологии. 2013. № 11. С. 57–60.
References
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