The Effects of Exposure to Fast Electron Radiation on High-Frequency Si PIN diodes and Schottky Barrier Diodes
- 1 к.т.н., директор по науке и производству, ОАО «Оптрон»
- 2 вед. инженер СКБ, ОАО «Оптрон»
- 3 к.т.н., доцент, кафедра «Полупроводниковая электроника и физика полупроводников», НИТУ «МИСиС»
- 4 к.т.н., зам. директора СКБ, ОАО «Оптрон»
Abstract
Radiation effects on major static and dynamic parameters microwave p-i-n diodes with varying thickness of i-layer while processing with fast electrons and low temperature annealing.
A technology was developed to fabricate epitaxial mesa-structures of p-i-n diodes which provides direct and reverse volt-ampere characteristics and high-speed performance by processing diodes with electron irradiation. Based on this technology samples of microwave diodes in KT-46 package were fabricated that outperform their foreign counterpart - HSMP3820 diode in a set of electrical parameters.
One of the insights was that in case of low-temperature activation with fast high-density electrons and drive-in diffusion of implanted boron in Si with simultaneous growth of dielectric film a p-type conductive region forms in n-type Si material which enables formation of p-n-junction after contact metallization.
Using original low-temperature technique to form a buffer ring and a protective dielectric film in a fast electron flux after barrier contact formation, samples of Schottky diodes with flat reverse volt-ampere characteristics and extended temperature range were fabricated.
How to cite
Абдуллаев О.Р., Дренин А.С., Лагов П.Б., Филатов М.Ю. Влияние радиационной обработки быстрыми электронами на кремниевые высокочастотные p-i-n-диоды с барьером Шоттки // Наукоемкие технологии. 2013. № 11. С. 51–56.
References
- Drenin A.S., Lagov P.B., Rogovskij E.S., Rudnev S.V. Radiaczionnaya obrabotka kremnievy'x p-i-n struktur s razlichnoj tolshhinoj i-sloya // VANT. Ser.: Fizika radiaczionnogo vozdejstviya na RE'A. 2012. № 1. S. 76-78.
- Filatov M.Ju., Rogovskij E.S., Kolmakova T.P., Mezhenny'j M.V., Drenin A.S. Issledovanie i ustranenie prichin braka pri proizvodstve moshhny'x kremnievy'x p-i-n diodov // E'lektronnaya texnika. Ser. 2. Poluprovodnikovy'e pribory'. 2012. № 2. S. 77-86.
- Zhukova N.S., Kry'mko M.M., Ledovskix A.P., Maksimov A.N, Sopov O.V. Analiz sposobov snizheniya vremeni vosstanovleniya obratnogo soprotivleniya moshhny'x by'strodejstvuyushhix diodov // E'lektronnaya texnika. Ser. 2. Poluprovodnikovy'e pribory'. 2010. S. 83-87.
- Ryabka P.M., Balagura V.S. Izmerenie e'nergii puchka zaryazhenny'x chasticz s pomoshh'yu aksial'no-sekczionirovannogo czilindra Faradeya // VANT. Ser.: Jaderno-fizicheskie issledovaniya. Xar'kov. 1999. № 1. S. 98-99.
- Kolmakova T.P., Drenin A.S., Lagov P.B. Issledovanie razlichny'x rezhimov e'pitaksial'nogo narashhivaniya sloev kremniya dlya sozdaniya p-i-n struktur pereklyuchatel'ny'x diodov // Tezisy' IV Mezhdunar. nauch. konf. «Kremnij 2007». Moskva. 2007. S. 161.
- Lagov P.B., Musalitin A.M., Drenin A.S. Primenenie texnologicheskoj obrabotki by'stry'mi e'lektronami dlya povy'sheniya by'strodejstviya pereklyuchatel'ny'x p-i-n diodov // Tezisy' IV Ross. konf. s mezhdunar. uchastiem po fizike, materialovedeniyu i fiziko-ximicheskim osnovam texnologij polucheniya legirovanny'x kristallov kremniya i priborny'x struktur na ix osnove «Kremnij 2007». Moskva. 2007. S. 238.
- Drenin A.S., Lagov P.B., Filatov M.Ju. Issledovanie vliyaniya rezhimov radiaczionnoj obrabotki na kremnievy'e vy'sokochastotny'e pin-diody' s tonkoj bazoj // Sb. tezisov. Tverdotel'naya e'lektronika. Slozhny'e funkczional'ny'e bloki RE'A. Materialy' VIII nauchno-texn. konf. molody'x speczialistov. 2009. S. 19-20.
- Lagov P.B., Drenin A.S., Manyakina D.S. Primenenie e'lektronnogo oblucheniya dlya e'lektricheskoj aktivaczii i «razgonki» implantirovannogo bora v kremnii // Voprosy' atomnoj nauki i texniki. Ser.: Fizika radiaczionnogo vozdejstviya na radioe'lektronnuyu apparaturu. 2012. № 3. S. 51-53.
- Drenin A.S., Lagov P.B., Filatov M.Ju. Optimizacziya parametrov VAX detektorny'x diodov s bar'erom Shottki na kremnii // Sb. tezisov VIII nauch.-texn. konf. molody'x speczialistov «Tverdotel'naya e'lektronika. Slozhny'e funkczional'ny'e bloki RE'A». Dubna. 2009. S. 22.
- Drenin A.S., Lagov P.B., Rogovskij E.S., Filatov M.Ju. Vliyanie radiaczionnoj obrabotki na parametry' ionnolegirovanny'x sloev kremniya // Sb. tezisov X nauch.-texn. konf. molody'x speczialistov «Tverdotel'naya e'lektronika. Slozhny'e funkczional'ny'e bloki RE'A». Dubna. 2011. S. 193-196.