O.R. Abdullaev

2013

1. Analysis of the Effect of Neutron Irradiation on the Size and Parameters of Optical Active Region and Current-Lumen-Voltage Characteristics of Quaternary AlGaInP and AlGaInN Heterostructures Science Intensive Technologies, No. 11, 2013 pp. 94-103
2. Perspective Application of Cubic Boron Nitride for Electronic Devices Fabrication Science Intensive Technologies, No. 11, 2013 pp. 89-92
3. Investigation of Cubic Boron Nitride Using the Colour Cathodoluminescence (CCL) and High Resolution Spectral Analysis in a Scanning Electron Microscope Science Intensive Technologies, No. 11, 2013 pp. 84-88
4. Application of Plasma-Chemical Etching for pin Diode Technology Science Intensive Technologies, No. 11, 2013 pp. 57-60
5. The Effects of Exposure to Fast Electron Radiation on High-Frequency Si PIN diodes and Schottky Barrier Diodes Science Intensive Technologies, No. 11, 2013 pp. 51-56
6. Relevant Characteristics of Epitaxial Growth Technology of Microwave and RF PIN-Diodes at JSC «Optron» and its Perspectives Science Intensive Technologies, No. 11, 2013 pp. 22-29
7. New Clamping Si Diode Technology Integrated on a Heatsink Science Intensive Technologies, No. 11, 2013 pp. 19-21