Experimental studies of nanoheterostructures with superconductor-semiconductor junctions
- 1 Student, MPTI, Engeneer, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
- 2 Dr.Sc. (Phis.-Math.), Professor, Leading Reseracher, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
Abstract
Fabricated and tested bolometers with titanium oxide and chromium oxide Schottky barrier instead of the conventional SIN bolometers with transitions. During measurements were obtained semiconductor temperature dependence of asymptotic resistance. Noise equivalent power for Ti samples 3,5 - 10?17 W/Hz1/2.
How to cite
Нагирная Д.В., Тарасов М.А. Исследование наногетероструктур с переходами сверхпроводник - полупроводник - нормальный металл // Нелинейный мир. 2014. № 2. С. 61–63.
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