Journals
Books
Articles by keyword полевой транзистор
Field-Effect Transistor on the Basis of Silicon Nanowire
V.A. Krupenin, D.E. Presnov, V.S. Vlasenko, S.V. Amitonov
Technique of Specification of Characteristics of Model of Materka of the Field Transistor
V.P. Meshchanov, A.L. Khvalin
Contact Precision Error Reduction for Power Fet-s Parameters Measuring
A.A. Kapralova, L.V. Manchenko, V.M. Lukashin, A.B. Pashkovskii, V.A. Pchelin
Plasmon detection of terahertz radiation by grating-gate field-effect transistors with two-dimensional channel
D.V. Fateev
Plasmonic detection of terahertz radiation in two-dimension channel of double-grating-gate field-effect transistors with asymmetric unit cell
D.V. Fateev, V.V. Popov, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap, S.A. Nikitov
Field-effect transistor on the basis of silicon nanowire
D.E. Presnov, S.V. Amitonov, V.A. Krupenin
Silicon transistor with the nanowire channel from non-uniformly doped silicon on insulator
S.V. Amitonov, D.E. Presnov, V.A. Krupenin
A new method of gate dielectric degradation analysis in nigh-speed field-effect transistor
V.E. Drach - Ph. D. (Eng.), Associate Professor, EIU1-KF, Kaluga branch of the Bauman MSTU. E-mail: drach@kaluga.org
A.V. Rodionov - Ph. D. (Eng.), Associate Professor, EIU2-KF, Kaluga branch of the Bauman MSTU. E-mail: andviro@gmail.com
Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Than Phyo Kyaw

Institute of Quantum Physics and Nanoelectronics of the National Research University "MIET" (Moscow, Russia)

Preparation of the substrate surface of silicon nanowire field-effect transistors to create a biosensor

A.A. Cheremiskina¹, V.M. Generalov², A.S. Safatov³, G.A. Buryak4, A.L. Aseev5

1–4 Federal State Research Institution State Research Center of Virology and Biotechnology «Vector» Rospotrebnadzor     (Koltsovo, Novosibirsk Region, Russia)

5 Institute of Semiconductor Physics named after A.V. Rzhanov, Siberian Branch of the Russian Academy of Sciences

Novosibirsk State University (Novosibirsk, Russia)

Construction features of medium wave radiobeacon of differential subsystems of global navigation satellite systems «Kaskad 800», that has increased operational reliability, and its perspective opportunities

L.A. Abramov – Ph.D. (Eng.), Chief Expert, JSC «Russian Institute of Radionavigation and Time» (St. Petersburg) E-mail:office@rirt.ru

N.S. Khokhlov – Head of Laboratory, JSC «Russian Institute of Radionavigation and Time» (St. Petersburg)

N.A. Korotkov – Head of Department, JSC «Russian Institute of Radionavigation and Time» (St. Petersburg)

D.G. Kravchenko – Senior Engineer, JSC «Russian Institute of Radionavigation and Time» (St. Petersburg)

V.S. Nikitin – Senior Engineer, JSC «Russian Institute of Radionavigation and Time» (St. Petersburg)

Ultra-wideband microwave power amplifier

A.V. Bobrov1, V.N. Vyuginov2, I.G. Kiselev3, M.Sh. Tugushev4

1,3,4 JSC “Svetlana-Electronpribor” (St. Petersburg, Russia)

2 LETI (St. Petersburg, Russia)

Simulation of nanoelectronic device structures based on 2D materials

I.I. Abramov1, N.V. Kalameitsava2, V.A. Labunov3, I.A. Romanova4, I.Yu. Shcherbakova5

1–5 Belarusian State University of Informatics and Radioelectronics (Minsk, Belarus)