Журнал «Радиотехника» | Издательство РАДИОТЕХНИКА

A.A. Arendarenko - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: arendarenko.pulsar@mail.ru V.N. Danilin - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: danilin.pulsar@mail.ru А.А. Makarov - Leading Expert, JSC «GZ «Pulsar» (Moscow). E-mail: a.makarov@gz-pulsar.ru R.I. Tichkin - Head of Department, JSC «GZ «Pulsar» (Moscow). E-mail: kb-it@mail.ru

Simulation of the "soft breakdown" phenomenon in the microwave HEMT based on gallium nitride

V.G. Tikhomirov – Ph.D. (Eng.), Associate Professor, Saint-Petersburg Electrotechnical University “LETI”

E-mail: vv11111@yandex.ru

M.K. Popov – Student, Saint-Petersburg Electrotechnical University “LETI”

E-mail:mat68rus@mail.ru

G.A. Gudkov – Laboratorian, Hyperion Ltd. (Moscow)

E-mail: ooo.giperion@gmail.com

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Than Phyo Kyaw

Institute of Quantum Physics and Nanoelectronics of the National Research University "MIET" (Moscow, Russia)

Modernization of the quasi-monolithic microwave integrated circuit power ampifier

V.A. Iovdalskiy1, N.V. Ganiushkina2, V.P. Marin3, I.N. Ayupov4, P.A. Storin5

1,2,4,5 JSC «RPC “Istok” named after Shokin» (Moscow region, Fryazino, Russia)
3 MIREA – Russian Technological University (Moscow, Russia)

Reseach of the possibility of improving of biosensors sensitivity based on a gallium nitride nanoheterostructure of a transistor with high electron mobility for using as part of a multiparameter invasive complex

V.G. Tikhomirov1, G.A. Gudkov2, S.V. Agasieva3

1 St. Petersburg State Electrotechnical University «LETI» (Saint-Petersburg, Russia)
2 HYPERION Ltd. (Moscow, Russia)
3 Peoples’ Friendship University of Russia (Moscow, Russia)
1 greenbob53@gmail.com, 3 agasieva-sv@rudn.ru