Журнал «Радиотехника» | Издательство РАДИОТЕХНИКА

O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
T.P. Kolmakova - Ph.D. (Eng.), Production Site Manager, JSC «Optron»
M.V. Mezhennyi - Assistant of Production Site Manager, JSC «Optron»
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru

Perspectives of development of domestic electronics

S.S. Strelchenko - Dr.Sc. (Eng.), Proffesor, Bauman Moscow State Technical University, Kaluga Branch. E-mail: stas40@kaluga.ru

Perspective technology of fabrication of high-voltage p-i-n GaAs-AlGaAs structures for power electronics

V.L. Krukov - Ph.D.(Eng.), JSC «Mega Epiteсh» (Kaluga). E-mail: vitk3@mail.ru E.V. Krukov -Engenir, JSC «Mega Epiteсh» (Kaluga)
L.A. Meerovich - General Director, EAO «ELMAT» (Kaluga). E-mail: lameerovich@gmail.com
S.S. Strelchenko - JSC «Mega Epiteсh» (Kaluga)
S.S. Strelchenko - Dr.Sc. (Eng.), Professor, Bauman Moscow State Technical University, Kaluga Branch. E-mail: stas40@kaluga.ru
K.A. Titivkin - Engineer, JSC «Mega Epiteсh» (Kaluga)

Perspectives of development of domestic electronics

S.S. Strelchenko - Dr.Sc. (Eng.), Proffesor, Bauman Moscow State Technical University, Kaluga Branch. E-mail: stas40@kaluga.ru

Perspective technology of fabrication of high-voltage p-i-n GaAs-AlGaAs structures for power electronics

The peculiarities of InGaAsP/InP nanoheterostructures technology for laser radiation receivers at 1064 nm wave length

A.E. Marichev - Post-graduate of the Optoelectronic Chair St-P.GETU «LETI»; Laboratory Assistant, Ioffe Institute. E-mail: segregate1@yandex.ru R.V. Levin - Senior Research Scientist, Ioffe Institute. E-mail: lev13@yandex.ru A.B. Gordeeva - Ph.D. (Phys.-Math.), Senior Research Scientist, Ioffe Institute. E-mail: anasta-siya.gordeeva@mail.ioffe.ru G.S. Gagis - Ph.D. (Phys.-Math.), Senior Research Scientist, Ioffe Institute. E-mail: galina.gagis@gmail.com V.I. Kuchinskii - Dr.Sc. (Phys-Math), Professor, Main Research Scientist, Ioffe Institute, Head of the Optoelectronic Chair St-P.GETU «LETI». E-mail: HHvladimir@kuchU.UioffeU.UruH N.D. Prasolov - Engineer Ioffe Institute, Post-graduate, St-P. National Research University of information Technology, Mechanic and Optic (ITMO). E-mail:nikpras@bk.ru N.M. Shmidt - Dr.Sc. (Phys-Math), Professor, Main Research Scientist, Ioffe Institute, Teacher of the Optoelectronic Chair St-P.GETU «LETI». E-mail: HHnataliaU.Ushmidt@mailU.UioffeU.Uru

The properties of nanoscale transition layer on the insulator-semiconductor interface in the MIS structures based on MBE n(p)-Hg<sub>1-x</sub>Cd<sub>x</sub>Te (x = 0.21-0.23) with near-surface graded-gap layers and without such layers

A.V. Voitsekhovskii - Dr.Sc. (Phys.-Math.), Head of Department, National Research Tomsk State University E-mail: vav43@mail.tsu.ru N.A. Kulchitsky - Dr.Sc. (Eng.), Professor, Moscow Technological University (MIREA), Lomonosov Moscow State University E-mail: n.kulchitsky@gmail.com S.N. Nesmelov - Ph.D. (Phys.-Math.), Senior Research Scientist, National Research Tomsk State University E-mail: nesm69@mail.ru S.M. Dzyadukh - Ph.D. (Phys.-Math.), Research Scientist, National Research Tomsk State University E-mail: bonespirit@sibmail.com

Production of thin graphite films on a dielectric substrate by heteroepitaxial synthesis

I.A. Sorokin, D.V. Kolodko, E.G. Shustin, V.A. Luzanov

Fryazino branch of Kotelnikov Institute of Radioengineering and Electronics of RAS (Fryazino, Russia)

Production of thin graphite films on a dielectric substrate by heteroepitaxial synthesis

I.A. Sorokin1, D.V. Kolodko2, E.G. Shustin3, V.A. Luzanov4

1-4 Fryazino branch of Kotelnikov Institute of Radioengineering and Electronics of RAS (Fryazino, Russia)