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Articles by keyword pHEMT
Analysis of the influence of the base transistor topology on the static characteristics in order to determine the optimal design of the transistor as part of the MIC for microwave radiothermometry

S.V. Chizhikov¹, V.G. Tikhomirov², G.A. Gudkov³

  1. Bauman Moscow State Technical University (Moscow, Russia)
  2. St.-Petersburg State Electrotechnical University «LETI» (St.-Petersburg, Russia)
  3. HYPERION ltd. (Moscow, Russia)

1 chigikov95@mail.ru, 2 vv11111@yandex.ru, 3 ooo.giperion@gmail.com

Design of monolithic microwave integrated circuit X-band switch on GaAs рНЕМТ

D.V. Klimenko1, A.B. Nikitin2, A.A. Stroganov3, I.A. Tsikin4

1 Special Technological Center Ltd, (St. Petersburg, Russia)

2-4 Peter the Great St. Petersburg Polytechnic University (St. Petersburg, Russia)

1 devklimenko@stc-spb.ru; 2 nikitin@mail.spbstu.ru; 3 stroganov.aa@edu.spbstu.ru; 4 tsikin@mail.spbstu.ru

Monolithic integrated circuit LNA 5–10 GHz

D.V. Kantuk1, S.I. Tolstolutskiy2, K.A. Khara3

1–3 FSUE «RNIIRS» (Rostov-on-Don, Russia)

1 Kantyuk_dv@mail.ru, 2 tolstolutsky_si@mail.ru