D.S. Danilov1, T.M. Batoev2, Yu.A. Lamanov3, I.V. Khmara4, A.S. Zagorodny5

1–5 Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
1 danilov.ds@micran.ru, 2 tsyren.batoev.99@mail.ru, 3 yury_lamanov@mail.ru, 4 graviti231@mail.ru, 5 zaaswork@gmail.com

This article details the development of a monolithic integrated circuit (MIC) for an ultra-wideband distributed amplifier. It outlines the ope­rational principles of the amplifier and the computational methods used for distributed amplification. The design utilizes pseudomorphic high electron mobility transistor (pHEMT) technology with a gate width of 0.1 um on a gallium arsenide substrate. To increase the output power and gain of the MIC, nine cascode cells were used. Small 2x30 um pHEMT were used for wide bandwidth operation. Both calcula­ted and measured characteristics are presented. Measured results of the amplifier samples demonstrate a consistent gain of 17 dB across a frequency range from 10 MHz to 35 GHz. The amplifier achieves a compression of the output power by 1 dB occurs at 18 dBm or more over the entire frequency range. Additionally, the noise figure is less than 7 dB in the frequency range from 5 to 35 GHz. This amplifier is suitable for a variety of broadband microwave applications, inclu­ding test and measurements instruments.

Danilov D.S., Batoev T.M., Lamanov Yu.A., Khmara I.V., Zagorodny A.S. 0.01…35 GHz GaAs pHEMT travelling wave amplifier. Achieve­ments of modern radioelectronics. 2026. V. 80. № 4. P. 98–107. DOI: https://doi.org/10.18127/j20700784-202604-10 [in Russian]

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