D.V. Klimenko1, A.B. Nikitin2, A.A. Stroganov3, I.A. Tsikin4

1 Special Technological Center Ltd, (St. Petersburg, Russia)

2-4 Peter the Great St. Petersburg Polytechnic University (St. Petersburg, Russia)

1 devklimenko@stc-spb.ru; 2 nikitin@mail.spbstu.ru; 3 stroganov.aa@edu.spbstu.ru; 4 tsikin@mail.spbstu.ru

Microwave switches are widely used in the design of transceivers for various purposes. Integrated switches are used as the main components of devices for discrete control of microwave oscillation parameters (phase shifters and attenuators). Currently, the task of improving microwave monolithic integrated circuits (MMICs) produced on the basis of domestic technologies is urgent. At the same time, more flexible production conditions provided by the so-called "foundry" - customized MMIC manufacturers increase interest in precisely such domestic technological processes. Therefore, the development of an MMIC switch topology based on domestic PDK for the 0.25 μm GaAs pHEMT technological process is an urgent task.

The designed switch in the frequency range of 7...11 GHz must have an open channel loss of less than 1.2 dB and VSWR of less than 1.3. The SPDT switch isolation between output channels must be greater than 40 dB.

To select the basic switch structure, this work examines two variants of SPDT circuits. These circuits contain two and three transistors in each switch channel. It is shown that the channel structure based on a series-parallel circuit on two transistors does not allow to achieve the required isolation values. The isolation in the high-frequency part of the range turns out to be 5 ... 6 dB less than required. Therefore, a circuit with three transistors in each switch channel was chosen as the basic structure for designing the MMIC topology. One transistor is series-connected, and two transistors are parallel-connected. Based on this structure, the SPDT switch topology was designed, and parameters of transistors and passive elements that provide the specified characteristics were determined.

As a result, the designed switch in the considered frequency band (7...11 GHz) has an open channel loss of less than 1 dB, providing an isolation between output channels of more than 50 dB and a closed channel insertion loss of more than 41 dB. In this case, the input and output VSWR of the open channel does not exceed 1.2, the value of the input power of the 0.1 dB compression point is 27.5 dBm. The MMIC sizes are 1400´1200 microns. The designed switch is comparable to the samples of foreign manufacturers in terms of its overall characteristics.

Klimenko D.V., Nikitin A.B., Stroganov A.A., Tsikin I.A. Design of monolithic microwave integrated circuit X-band switch on GaAs рНЕМТ. Radiotekhnika. 2024. V. 88. № 3. P. 92−101. DOI: https://doi.org/10.18127/j00338486-202403-09 (In Russian)

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