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Articles by keyword TCAD
Nanoscale silicon field effect transistors for biosensors

N.V. Masalsky – Ph. D. (Phys-Math.), Leader Research Scientist, 

Federal scientific center, Research Institute for System Research of the RAS (Moscow)

E-mail: volkov@niisi.ras.ru

Sensory properties of fin surrounding gate nanotransistors

N.V. Masalsky

Federal State Institution «Scientific Research Institute for System Analysis of RAS» (Moscow, Russian)

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Н.В. Масальский – к.ф.-м.н., вед. науч. сотрудник,
Федеральный научный центр «Научно-исследовательский институт системных исследований РАН» (Москва)
E-mail: volkov@niisi.ras.ru

Vertical CMOS nanotransistors with a conical channel for three-dimensional integrated circuits

Н.В. Masalsky1

1 Federal State Institution "Scientific Research Institute for System Analysis of RAS" (Moscow, Russia)

Sensory properties of a complementary pair of silicon field-effect nanotransistors with cylindrical geometry

N.V Masalsky1

1 Federal State Institution “Scientific Research Institute for System Analysis of the Russian Academy of Sciences” (Moscow, Russia)

Analysis of the behavior of TCAD and SPICE diode models in ESD protection circuits

A.V. Tuchin1, N.R. Krasikov2, V.K. Lanovoy3, P.A. Kondratovich4, A.Yu. Tkachev5, G.I. Glushkov6

1, 2, 4 Voronezh State University (Voronezh, Russia)
1–6 JSC «ICC Milandr» (Zelenograd, Moscow Region, Russia)
1tuchin.av@milandr.ru, 2krasikov.n@milandr.ru, 3lanovoy.v@milandr.ru, 4kondratovich.p@milandr.ru, 5tkachev.a@milandr.ru, 6glushkov.gi@milandr.ru