Journals
Books
Articles by keyword широкозонные полупроводниковые материалы
Industrial Process Design of Microwave Transistors on Heteroepitaxial Gallium Nitride Structures at State Plant Pulsar
V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Principal on innovative development, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Senior Specialist, GZ Pulsar. E-mail: kb-it@mail.ru
А.А. Makarov - Processing Engineer, GZ Pulsar. E-mail: makarov.pulsar@gmail.com
M.V. Pashkov - Processing Engineer, GZ Pulsar. E-mail: michaelpashkov@yandex.ru
R.I. Tychkin - Deputy Chief Engineer, GZ Pulsar
Perspective Application of Cubic Boron Nitride for Electronic Devices Fabrication
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, Place of employment: JSC «Optron». E-mail: abd@optron.ru
A.S. Yakunin - Director of Department for RF Electronics Production, Сhamber of Commerce and Industry of the Russian Federation
Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density
V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru
А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru
Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density
V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru
Aspects of InAlN/InGaN heterostructures epitaxial growth for HEMT transistors of communication systems
A.A. Arendarenko - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: arendarenko.pulsar@mail.ru V.N. Danilin - Senior Research Scientist, JSC «GZ «Pulsar» (Moscow). E-mail: danilin.pulsar@mail.ru А.А. Makarov - Leading Expert, JSC «GZ «Pulsar» (Moscow). E-mail: a.makarov@gz-pulsar.ru R.I. Tichkin - Head of Department, JSC «GZ «Pulsar» (Moscow). E-mail: kb-it@mail.ru