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Articles by keyword heterostructure field transistor (hemt)
Application of numerical modeling for evaluation of the influence of exploitation parameters and external impacts on the CVC of heterostructure field effect transistor used in radioelectronic equipment for space application
V.G. Tihomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: root@post.etu.spb.ru V.D. Shashurin - Dr.Sc. (Eng.), Professor, Head of Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: schashurin@bmstu.ru S.I. Vidyakin - Post-graduate Student, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: bmsturl@gmail.com S.V. Chizhikov - Assistant, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University E-mail: chigikov95@mail.ru