Journals
Books
Articles by keyword High electron mobility transistor
Transistors on heterostructures ALN/GAN for WIMAX
V.A. Burobin, A.M.Konovalov, A.Y.Voloshin
Transistors on Heterostructures Aln/GaN for WiMAX
V.A. Burobin, A.M. Konovalov, A.Y. Voloshin
Simulation of the "soft breakdown" phenomenon in the microwave HEMT based on gallium nitride

V.G. Tikhomirov – Ph.D. (Eng.), Associate Professor, Saint-Petersburg Electrotechnical University “LETI”

E-mail: vv11111@yandex.ru

M.K. Popov – Student, Saint-Petersburg Electrotechnical University “LETI”

E-mail:mat68rus@mail.ru

G.A. Gudkov – Laboratorian, Hyperion Ltd. (Moscow)

E-mail: ooo.giperion@gmail.com

Reseach of the possibility of improving of biosensors sensitivity based on a gallium nitride nanoheterostructure of a transistor with high electron mobility for using as part of a multiparameter invasive complex

V.G. Tikhomirov1, G.A. Gudkov2, S.V. Agasieva3

1 St. Petersburg State Electrotechnical University «LETI» (Saint-Petersburg, Russia)
2 HYPERION Ltd. (Moscow, Russia)
3 Peoples’ Friendship University of Russia (Moscow, Russia)
1 greenbob53@gmail.com, 3 agasieva-sv@rudn.ru