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Articles by keyword heterostructure transistor
Research of the influence of manufacturing errors on the parameters of transistors for monolithic microwave integrated circuits and identification of key factors determining their stability as part of a miniature radiothermograph

V.G. Tikhomirov1, S.V. Chizhikov2

1 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

2 Bauman Moscow State Technical University (Moscow, Russia)

2 LLC Scientific and Production Innovative Company “Hyperion” (Moscow, Russia)

Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits

A.G. Gudkov1, V.G. Tikhomirov2, S.V. Chizhikov3

1,3 Bauman Moscow State Technical University (Moscow, Russia)

2 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits

A.G. Gudkov1, V.G. Tikhomirov2, S.V. Chizhikov3

1,3 Bauman Moscow State Technical University (Moscow, Russia)

2 St. Petersburg State Electrotechnical University «LETI» (St. Petersburg, Russia)

1 profgudkov@gmail.com; 2 vv11111@yandex.ru; 3 chigikov95@mail.ru