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Articles by keyword барьер Шоттки
Selectively-Sensitive Ultraviolet MSM-Photodetectors
S.V. Averin, P.I. Kuznetzov, V.F. Zhitov, N.V. Alkeev, V.M. Kotov, A.A. Dorofeev, N.B. Gladisheva
The Effects of Exposure to Fast Electron Radiation on High-Frequency Si PIN diodes and Schottky Barrier Diodes
O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
A.S. Drenin - Senior Engineer of Design Department, JSC «Optron». E-mail: dasnew@mail.ru
P.B. Lagov - Ph.D. (Eng.), Associate Professor of the Chair for Semiconductor Electronics and Semiconductor Physics, MISiS. E-mail: lagov2000@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Application of Plasma-Chemical Etching for pin Diode Technology
O.R. Abdullaev - Pd. Sc. (Eng.), Director of Science and Production, JSC «Optron». E-mail: abd@optron.ru
E.S. Rogovskiy - Senior Engineer, JSC «Optron». E-mail: skb-optron@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru
Experimental studies of nanoheterostructures with superconductor-semiconductor junctions
D.V. Nagirnaia - Student, MPTI, Engeneer, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
M.A. Tarasov - Dr.Sc. (Phis.-Math.), Professor, Leading Reseracher, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
Experimental studies of nanoheterostructures with superconductor-semiconductor junctions
D.V. Nagirnaia - Student, MPTI, Engeneer, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences M.A. Tarasov - Dr.Sc. (Phis.-Math.), Professor, Leading Reseracher, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences