The Mechanisms, determining fluctuations of threshold voltages of short-channel CMOS transistors

The mechanisms, which determine fluctuations of threshold voltages of short-channel CMOS transistors, including SOI (silicon on isolator) transistors are considered. The fluctuations of threshold voltages conditioned by technology factors, render considerable influencing on the limiting characteristics of field-effect transistors and degree of a miniaturization. It is necessary to allow for their influencing at the solution of CAD problem.