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Articles by keyword high-electron-mobility transistor
Dependence analysis of the GaN HEMT parameters on the thickness AlGaN barrier layer by numerical simulation
V.A. Petrov - Engineer, CJSC "Svetlana - Elektronpribor" (St.-Peterburg). E-mail: v.petrov@svetlana-ep.ru V.G. Tikhomirov - Ph.D. (Eng.), CJSC "Svetlana - Elektronpribor" (St.-Peterburg). E-mail: v11111@yandex.ru
The effect of low temperature annealing on the low-frequency and microwave transistors on the parameters of heterostructures AlGaN / GaN
A.S. Evseenkov - Post-graduate Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana Elektropribor» E-mail: as.evseenkov@gmail.com V.E. Zemlyakov - Ph.D. (Eng.), Associate Professor, National Research University of Electronic Technology - MIET (Moscow) E-mail: vzml@rambler.ru V.G. Tikhomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: v11111@yandex.ru S.A. Tarasov - Ph.D. (Phus.-Math.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: SATarasov@mail.ru Y.M. Parnes - Post-graduate Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: jmparnes@gmail.com N.K. Balovnev - Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: nikolay5556@gmail.com E.E. Kurteev - Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: kusticky@gmail.com A.N. Lubyanoy - Engineer, JSC «Svetlana-Elektronpribor» E-mail: andrey.lubyanoy@gmail.com