Journals
Books
Articles by keyword phonon
Determination of the Particles - Sizes by Means of the Acousto-Optic Analysis of the Speckle Structure of the Diffracted Field
V.M. Kotov, G.N. Shkerdin
Effect of laser on formation of nanocrystals embedded in amorphous silicon and diamond
A.A. Khomich
Ab initio approaches used by phase transition study and phonons pressure behaviour in molecular crystals
E.M. Roginskii - Dr. Sc. (Phys.-Math.), Senior Researcher, Ioffe Institute RAS, Saint-Petersburg. E-mail: e.roginskii@mail.ioffe.ru А.С. Крылов - Dr. Sc. (Phys.-Math.), Professor, Senior Researcher, L.V. Kirensky Institute of Physics SB RAS, Krasnoyarsk. E-mail: shusy@iph.krasn.ru Yu.F. Markov - Dr. Sc. (Phys.-Math.), Professor, Senior Researcher, Ioffe Institute RAS, Saint-Petersburg. E-mail: Yu.Markov@mail.ioffe.ru
Phonon spectroscopy of ferroelectrics with diffuse phase transition at helium temperature
E.N. Khazanov - Dr. Sc. (Phys.-Math.), Professor, Leading Research Scientist, Kotel\'nikov IRE of RAS (Moscow). E-mail: khazanov@cplire.ru A.V. Taranov - Ph. D. (Phys.-Math.), Senior Research Scientist, Kotel\'nikov IRE of RAS (Moscow). E-mail: taranov@cplire.ru
Phonon spectroscopy of ferroelectrics with diffuse phase transition at helium temperature
E.N. Khazanov - Dr. Sc. (Phys.-Math.), Professor, Leading Research Scientist, Kotel\'nikov IRE of RAS (Moscow). E-mail: khazanov@cplire.ru A.V. Taranov - Ph. D. (Phys.-Math.), Senior Research Scientist, Kotel\'nikov IRE of RAS (Moscow). E-mail: taranov@cplire.ru
Nature of radiation damage in diamonds
А.А. Khomich - Junior Research Scientist, Kotelnikov IRE RAS (Fryazino Branch). E-mail: antares-610@yandex.ru А.А. Popovich - Senior Engineer, Kotelnikov IRE RAS (Fryazino Branch) О.N. Poklonskaya - Ph.D. (Phys.-Math.), Junior Research Scientist, Belarusian State University R.А. Khmelnitsky - Ph.D. (Phys.-Math.), Senior Research Scientist, Lebedev Physical Institute of RAS (Moscow) А.V. Khomich - Ph.D. (Phys.-Math.), Leading Research Scientist, Kotelnikov IRE RAS (Fryazino Branch)
New solid-state electronics based on THz splitting and strain of LPE SiGaAsSi crystals energy band gap (Part 1)

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