A.I. Gordeev – Deputy Director of LLC «Intelsob» (Ulyanovsk)

E-mail: Gordeev.gai@mail.ru

V.E. Voitovich – Dr. Sc. (Eng.), Head of AS «Clifton Electronics» (Tartu, Republic of Estonia) E-mail: vvoitovitsh@gmail.com

A.V. Zvonarev – Leading Specialist, LLC «Intelsob» (Ulyanovsk) E-mail: eduhelper@yandex.ru

The paper deals with the issues connected with the unique energetics of LPE GaAs single crystals doped by amphoteric atoms of silicon with new semiconductor and dielectric properties. Obtained and projected electrophysical properties of LPE GaAs single crystals allow, using the new principles of physical modeling, to put into practice the complete range of devices belonging to different classes and groups which ever have been created on the basis of widely known semiconductor materials, such as silicon, germanium, silicone carbide, gallium nitride, indium phosphide, gallium phosphide etc.

1. Zi S.M. Fizika poluprovodnikovy'x priborov. Per. s angl. pod red. A.F. Trutko M.: E'nergiya. 1973.
2. Ashkinazi G. GaAs Power Devices. Israel. 1999.
3. Andreev V.M., Dolginov L.M., Tret'yakov D.N. Zhidkostnaya e'pitaksiya v texnologii poluprovodnikovy'x priborov / Pod red. chl.-kor. AN SSSR Zh.I. Alferova. M.: Sov. radio. 1975.
4. Nashel'skij A.Ya. Monokristally' poluprovodnikov. M.: Metallurgiya. 1978.
5. Vojtovich V.E., Gordeev A.I. GaAs diody' dlya PFC, SMPS, UPS, IPM, Solar invertors i zameny' sinxronny'x vy'pryamitelej // Silovaya e'lektronika. 2012. № 5.
6. Vojtovich V.E., Gordeev A.I., Dumanevich A.N. Novaya e'kstremal'naya e'lektronika na osnove LPE i-GaAs monokristallov // Sovremennaya e'lektronika». 2014. № 6.
7. Voitovich Viktor, Rang Toomas, Rang Galina. LPE technology for power GaAs diode structures // Estonian Journal of Engineering. 2010.16. 1. 11−22.
8. Dudek Volker (Clifton GmbH, Germany), Kowalsky Jens, Lutz Josef (Chemnitz University of Technology, Germany). GaAs pin Diode Devices and Technology for High Power applications at 600V and above // CS MANTECH International Conference on Compound Semiconductor MANufacturing TECHnology, Denver CO (USA). GaAs Mantech, Incorporated. 2014. P. 397−400.
9. Alferov Zh.I., Andreev V.M., Korol'kov V.I., Portnoj E.L., Tret'yakov D.N. Fizika e'lektronno-dy'rochny'x perexodov i poluprovodnikovy'x priborov. L.: Nauka. 1969. S. 260−267.
10. Alferov Zh.I., Andreev V.M., Korol'kov V.I., Portnoj E.L., Tret'yakov D.N. Inzhekczionny'e svojstva geteroperexodov n-AlxGa1-xAs – pGaAs // FTP. 1968. 2. 1016.
11. Vainshtein S., Yuferev V., Kostamovaara J., Kulagina M., Moilanen H. Significant effect of emitter area on the efficiency, stability and reliability of picosecond switching in a GaAs bipolar transistor structure // IEEE Electr. Dev. 2010. V. 57. P. 733−741.
12. Gordeev A.I. Perspektivny'e teragerczovy'e polyarizovanny'e informaczionny'e sistemy' (v 2-x chastyax) // Sovremennaya e'lektronika. 2016. № 6 i № 7.
13. Vojtovich V.E., Gordeev A.I., Zvonarev A.V. Teragerczovaya teplovol'taika na osnove monokristallov LPE i-GaAs (SiO)» (v 2-x chastyax) // Sovremennaya e'lektronika. 2017. № 3 i № 4.