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Articles by keyword high-electron-mobility transistors
Dependence analysis of the GaN HEMT parameters on the thickness AlGaN barrier layer by numerical simulation
V.A. Petrov - Engineer, CJSC "Svetlana - Elektronpribor" (St.-Peterburg). E-mail: v.petrov@svetlana-ep.ru V.G. Tikhomirov - Ph.D. (Eng.), CJSC "Svetlana - Elektronpribor" (St.-Peterburg). E-mail: v11111@yandex.ru