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Articles by keyword hgcdte
The properties of nanoscale transition layer on the insulator-semiconductor interface in the MIS structures based on MBE n(p)-Hg<sub>1-x</sub>Cd<sub>x</sub>Te (x = 0.21-0.23) with near-surface graded-gap layers and without such layers
A.V. Voitsekhovskii - Dr.Sc. (Phys.-Math.), Head of Department, National Research Tomsk State University E-mail: vav43@mail.tsu.ru N.A. Kulchitsky - Dr.Sc. (Eng.), Professor, Moscow Technological University (MIREA), Lomonosov Moscow State University E-mail: n.kulchitsky@gmail.com S.N. Nesmelov - Ph.D. (Phys.-Math.), Senior Research Scientist, National Research Tomsk State University E-mail: nesm69@mail.ru S.M. Dzyadukh - Ph.D. (Phys.-Math.), Research Scientist, National Research Tomsk State University E-mail: bonespirit@sibmail.com