Journals
Books
Articles by keyword ток утечки
Sources of 1/f noise in semiconductor nanoscale light-emitting structures based on GaAs and alloys
A.V. Klyuev - Lobachevsky State University of Nizhni Novgorod (National Research University). Е-mail: klyuev@rf.unn.ru
Effect of leakage and relaxation losses in the determination of the hysteresis parameters of the ferroelectric nanostructures
Yu.V. Podgorny - Ph.D. (Eng.), Leading Research Scientist, Head of Department of REC «Technological Center», Moscow Technological University. Е-mail: podgsom_2004@mail.ru K.A. Vorotilov - Dr.Sc. (Eng.), Professor, Director, REC «Technological Center», Moscow Technological University. Е-mail: vorotilov@mirea.ru А.S. Sigov - Dr.Sc. (Phys.-Math.), Professor, Academician RAS, Moscow Technological University. Е-mail: sigov@mirea.ru Р.Р. Lavrov - Post-Graduate Student, Nanoelectronics Department, Moscow Technological University. Е-mail: podgsom_2004@mail.ru
Design features of a high-frequency EMI filter in the frequency range 9 kHz – 100 MHz

V.F. Dmitrikov1, A.A. Vyalov2, A.K. Nevolin3, A.Yu. Petrochenko4, D.V. Shushpanov5

1,3,5 Bonch-Bruevich Saint Petersburg State University of Telecommunications (Saint Petersburg, Russia)

2 JSC NPP Istok named after A.I. Shokin (Fryazino, Russia)

4 JSC Concern NPO Aurora (Saint Petersburg, Russia)

1 Dmitrikov_VF@mail.ru, 5 dimasf@inbox.ru