350 rub
Journal №2 for 2016 г.
Article in number:
Effect of leakage and relaxation losses in the determination of the hysteresis parameters of the ferroelectric nanostructures
Keywords:
polarization
ferroelectrics
nanostructures
leakage current
lead zirconate titanate (pzt)
hysteresis loop
Authors:
Yu.V. Podgorny - Ph.D. (Eng.), Leading Research Scientist, Head of Department of REC «Technological Center», Moscow Technological University. Е-mail: podgsom_2004@mail.ru
K.A. Vorotilov - Dr.Sc. (Eng.), Professor, Director, REC «Technological Center», Moscow Technological University. Е-mail: vorotilov@mirea.ru
А.S. Sigov - Dr.Sc. (Phys.-Math.), Professor, Academician RAS, Moscow Technological University. Е-mail: sigov@mirea.ru
Р.Р. Lavrov - Post-Graduate Student, Nanoelectronics Department, Moscow Technological University. Е-mail: podgsom_2004@mail.ru
Abstract:
The paper presents the method of determining with higher accuracy remnant polarization and the coercive field of nanoscale ferroelectric structures by measuring the switching current of the ferroelectric polarization at two frequencies. Capacitor structures with dense and porous PZT films with thicknesses from 200 to 1200 nm were used to perform experiments. The calculation formulas are given to determine both the remnant polarization without contribution the leakage current and for determining of the relaxation losses for both triangular and sinusoidal voltage waveform. The application for calculations of any combination of the measurement results of switching currents on the frequencies 100, 200 and 300 Hz gives actually the same values.
Pages: 20-29
References
- Scott J.F. The physics of ferroelectric ceramic thin films for memory applications // Ferroelectrics review. 1998. V. 1. № 1. P. 1-129.
- Vorotilov K.A., Mukhortov V.M., Sigov A.S.Integrirovannye segnetoehlektricheskie ustrojjstva. M.: EHnergoatomizdat. 2011. 175 s.
- Grossmann M., Lohse O., Bolten D., Boettger U., Schneller T., Waser R.The interface screening model as origin of imprint in Pb(ZrxTi1-x)O3thin films, ii. Numerical simulation and verification // J. Appl. Phys. 2002. V.92. № 5. R. 2688-2696.
- Podgorny Yu.V., Seregin D.S., Sigov A.S., Vorotilov K.A. Effect of sol-gel film thickness on the hysteresis properties // Ferroelectrics. 2012. V.439. № 1. R. 74-79.
- Tagantsev A.K., Gerra G.Interface-induced phenomena in polarization response of ferroelectric thin films. // J. Appl. Phys. 2006. V. 100. R. 051607-051628.
- Miller S.L., Nasby R.D., Schwank J.R. et al.Device modeling of ferroelectric capacitors // Journal of applied physics. 1990. V. 8. № 12. R. 6463-6471.
- Podgornyjj JU.V., Vorotilov K.A., Lancev A.N., Seregin D.S., Sigov A.S. Vlijanie tolshhiny nanorazmernykh segnetoehlektricheskikh plenok na kharakteristiki gisterezisa MDM-struktur // Nanomaterialy i nanostruktury. 2012. T. 3. S. 16-20.
- Lee J. et al. Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors // Applied Physics Letters. 1998. V. 72. № 25. R. 3380-3382.
- Lee H.N., Hesse D., Zakharov N., Gösele U.Ferroelectric Bi3.25La0.75Ti3O12films of uniform a-axis orientation on silicon substrates // Science. 2002. V. 296. № 5575. R. 2006-2009.
- Meyer R., Waser R., Prume K., Schmitz T., Tiedke S. Dynamic leakage current compensation in ferroelectric thin-film capacitor structures // Applied Physics Letters. 2005. V. 86. № 14. R. 142907.
- Xiaogang C., Xi Y., Desheng Z., Liangying Z.Software compensation to the hysteresis loops of samples with high dielectric loss and high linear capacitor // Ferroelectrics. 2001, V. 259. № 1. R. 55-60.
- Dawber M., Rabe K. M., Scott J. F. Physics of thin-film ferroelectric oxides // Reviews of modern physics. 2005. V. 77. № 4. R. 1083.
- Dietz G.W., Schumacher M., Waser R., Streiffer S.K., Basceri C., Kingon A.I. Leakage currents in Ba0.7Sr0.3TiO3thin films for ultrahigh-density dynamic random access memories // J. Appl. Phys. 1997. V. 82. № 5. R. 2359-2364.
- Scott J.F. Models for the frequency dependence of coercive field and the size dependence of remanent polarization in ferroelectric thin films // Integrated Ferroelectrics. 1996. V. 12. № 2-4. R. 71-81.
- Lohse O., Grossmann M., Boettger U., Bolten D., Waser R.Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films // J. Appl. Phys. 2001. V. 89. № 4. R. 2332-2336.
- Chen I.W., Wang Y.Activation field and fatigue of (Pb,La)(Zr,Ti)O3 thin films // Applied Physics Letters. 1999. V. 75. № 26. R. 4186-4188.
- Kotova N.M., Podgornyjj JU.V., Seregin D.S., Vorotilov K.A., Sigov A.S. Vlijanie metodiki prigotovlenija plenkoobrazujushhikh rastvorov na ehlektrofizicheskie svojjstva segnetoehlektricheskikh plenok CTS // Nano- i mikrosistemnaja tekhnika.2010. № 10. S. 11-16.
- Zubkova E.N., Abdullaev D.A., Seregin D.S., Kotova N.M., Vorotilov K.A. Osobennosti mikrostruktury poristykh plenok CTS // Fundamentalnye problemy radioehlektronnogo priborostroenija. 2013. T. 2. S. 82-86.
- Podgornyjj JU.V., Vorotilov K.A., Sigov A.S. Toki utechki v tonkikh segnetoehlektricheskikh plenkakh // Fizika tverdogo tela. 2012. T. 54. № 5. S. 911-914.
- Sigov A., Podgorny Y., Vorotilov K., Vishnevsky A. Leakage currents in ferroelectric thin films. // Phase Transition.2013. V. 86. № 11. R. 1144-1151.
- Podgornyi Yu.V., Vishnevskii A.S., Vorotilov K.A., Lavrov P.P., Lantsev A.N. Electrophysical Properties of Lead Zirconate TitanateFilms Doped with Lanthanum // Russian Microelectronics 2014. V. 43. № 6. R. 438-444.
- Podgornyi Yu.V., Vishnevskii A.S., Vorotilov K.A., Lavrov P.P., Lantsev A.N. Electrophysical Properties of Lead Zirconate TitanateFilms Doped with Lanthanum // Russian Microelectronics 2014. V. 43. № 6. R. 438-444.
- Kotova N., Podgornyi Yu., Seregin D., Sigov A., Vishnevskii A., Vorotilov K. Effect of Lanthanum Doping on Leakage Currents of Sol-Gel PZT Thin Films //Ferroelectrics.2014. V. 465. R. 54-59.
- Podgorny Yu., Vorotilov K., Lavrov P., Sigov A. Leakage currents in porous PZT films. // Ferroelectrics. 2015.