350 rub
Journal №1 for 2014 г.
Article in number:
Sources of 1/f noise in semiconductor nanoscale light-emitting structures based on GaAs and alloys
Keywords: 1/f noise laser light-emitting diodes quantum wells quantum dots leakage current
Authors:
A.V. Klyuev - Lobachevsky State University of Nizhni Novgorod (National Research University). Е-mail: klyuev@rf.unn.ru
Abstract:
We have investigated 1/f voltage noise In0,2Ga0,8As/GaAs/InGaP lasers with quantum wells (QWs), light-emitting diodes (LEDs) with InAs quantum dots (QDs), LEDs with InAs QDs and In0,2Ga0,8As quantum well (QW). The main goals of our work are as follows: investigation of 1/f noise in nanoscale light-emitting structures, determination of noise sources. The analysis of the dependence of 1/f noise spectrum on the bias current has shown that this noise is originated by the linear and nonlinear leakage currents. Characteristics of noise in linear leakage and additional nonlinear leakage currents vary in wide range between structures.
Pages: 42-48
References

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