Journals
Books
Articles by keyword нитрид галлия
Development Perspectives of Power Electronic Devices on Gallium Nitride
V.A. Burobin - Ph.D. (Eng.), General Director, GZ Pulsar. E-mail: burobin@gz-pulsar.ru, openline@gz-pulsar.ru
The current state and the prospects of microwave device development at JSC «Svetlana»
V. V. Popov - Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Than Phyo Kyaw

Institute of Quantum Physics and Nanoelectronics of the National Research University "MIET" (Moscow, Russia)