Dependence of electroconductivity a-Si:H/c-Si structures on preliminary plasma treatment of single-crystalline silicon
- 1 Ph.D. (Eng.), Researcher, Saratov branch of the Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
- 2 Ph.D. (Eng.), Senior Researcher, Saratov branch of the Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
Abstract
Influence of preliminary treatment of single-crystalline silicon in argon and chladone plasma on change of electroconductivity a-Si:H/c-Si are realized. Essential influence on electroconductivity does preliminary treatment of chladone plasma are established. The samples will use as substrates for field-emission diamond-graphite structures.
How to cite
Нефедов Д.В., Суздальцев С.Ю. Зависимость электропроводности структур a-Si:H/c-Si от предварительной плазменной обработки монокристаллического кремния // Нелинейный мир. 2014. № 2. С. 74–75.
References
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